ULTRA-SMALL PACKAGE HIGH-PRECISION VOLTAGE DETECTOR
S-1000 Series
Rev.2.3_00
2. CMOS output products
Table 10
(Ta = 25 °C unless otherwise specified)
Item
Symbol
Condition
Measure-
Min. Typ. Max. Unit ment
circuit
Detection voltage*1
Hysteresis width
−VDET
VHYS
−
−VDET(S) −VDET(S) −VDET(S)
×0.99
×1.01
V
1
−
−VDET −VDET −VDET
×0.03 ×0.05 ×0.07
V
1
Current consumption
ISS
VDD = −VDET(S)+ 1.5 V S-1000C15 to 39 −
VDD = 5.5 V
S-1000C40 to 46 −
350 900 nA
2
350 900 nA
2
Operating voltage
VDD
Output current
IOUT
Response time
tPLH
Detection voltage
∆−VDET
temperature coefficient*2 ∆Ta•−VDET
−
Output transistor,
Nch, VDS = 0.5 V, VDD = 1.2 V
Output transistor,
Pch, VDS = 0.5 V, VDD = 5.5 V
−
Ta = −40 to +85 °C
0.95
−
5.5 V
1
1.36 2.55
− mA
3
1.71 2.76
− mA
4
−
−
60 µs
1
−
±100
±350
ppm/
°C
1
*1. −VDET: Actual detection voltage value, −VDET(S): Specified detection voltage value (The center value of the detection voltage
range in Table 2.)
*2. The temperature change ratio in the detection voltage [mV / °C] is calculated by using the following equation.
[ ] [ ] [ ] ∆ − VDET
∆Ta
mV / °C *1 = ( ) −VDET(S) Typ.
V *2 × ∆ − VDET
∆Ta • −VDET
ppm / °C *3 ÷ 1000
*1. Temperature change ratio of the detection voltage
*2. Specified detection voltage
*3. Detection voltage temperature coefficient
10
Seiko Instruments Inc.