PHP110NQ06LT View Datasheet(PDF) - NXP Semiconductors.
Part Name
Description
MFG CO.
PHP110NQ06LT Datasheet PDF : 13 Pages
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NXP Semiconductors
PHP110NQ06LT
N-channel TrenchMOS logic level FET
240
ID
(A)
Tj = 25 °C
160
80
0
0
1
10 V 5 V
03ap95
4.6 V
4.4 V
4.2 V
4V
3.6 V
3.2 V
VGS = 2.8 V
2
3 VDS (V) 4
75
VDS > ID x RDSon
ID
(A)
50
03ap97
25
0
0
Tj = 175 °C
25 °C
1
2
3
4
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
2.5
VGS(th)
(V)
2
03aa33
max
10-1
ID
(A)
10-2
03aa36
1.5
typ
1
min
10-3
min
typ
max
10-4
0.5
10-5
0
-60
0
60
120
180
Tj (°C)
10-6
0
1
2
3
VGS (V)
Fig 7. Gate-source threshold voltage as a function of Fig 8. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
PHP110NQ06LT_2
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 4 March 2010
© NXP B.V. 2010. All rights reserved.
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