Freescale
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low rDS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SC70-3 saves board space
• Fast switching speed
• High performance trench technology
AO7 4 13 / MC7 4 13
PRODUCT SUMMARY
VDS (V)
rDS(on) (OHM)
-20 0.079 @VGS= -4.5V
0.110 @ VGS = -2.5V
ID (A)
-1.7
-1.5
G
D
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Currenta
Pulsed Drain Currentb
VDS
VGS
TA=25oC
TA=70oC
ID
IDM
-20
V
±8
-1.7
-1.4
A
-2.5
Continuous Source Current (Diode Conduction)a
IS
±0.28 A
Power Dissipationa
Operating Junction and Storage Temperature Range
TA=25oC
TA=70oC
PD
0.34
W
0.22
TJ, Tstg -55 to 150 oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
t <= 5 sec
Steady-State
Symbol
RTHJA
Maximum Units
375
oC/W
430
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
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