M59DR008F100N6 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

M59DR008F100N6

8 Mbit (512Kb x16, Dual Bank, Page) Low Voltage Flash Memory

STMicroelectronics 

M59DR008E, M59DR008F

Table 23. Capacitance (1)

(TA = 25 °C, f = 1 MHz)

Symbol

Parameter

CIN

Input Capacitance

COUT

Output Capacitance

Note: 1. Sampled only, not 100% tested.

Test Condition

VIN = 0V

VOUT = 0V

Min

Max

Unit

6

pF

12

pF

Table 24. AC Measurement Conditions

Input Rise and Fall Times

≤ 4ns

Input Pulse Voltages

0 to VDDQ

Input and Output Timing Ref. Voltages

VDDQ/2

Figure 4. AC Testing Load Circuit

VDDQ / 2

1N914

Figure 3. Testing Input/Output Waveforms

VDDQ

0V

VDDQ/2

AI02315

DEVICE

UNDER

TEST

3.3kΩ

OUT

CL = 30pF

CL includes JIG capacitance

AI02316

20/37

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