M45PE80-VMN6TP View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

M45PE80-VMN6TP

8 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability and a 50 MHz SPI bus interface

STMicroelectronics 

M45PE80

5

Memory organization

Memory organization

The memory is organized as:

● 4096 pages (256 bytes each).

● 1 048 576 bytes (8 bits each)

● 16 sectors (512 Kbits, 65536 bytes each)

Each page can be individually:

● programmed (bits are programmed from 1 to 0)

● erased (bits are erased from 0 to 1)

● written (bits are changed to either 0 or 1)

The device is Page or Sector Erasable (bits are erased from 0 to 1).

Table 2. Memory organization

Sector

15

F0000h

14

E0000h

13

D0000h

12

C0000h

11

B0000h

10

A0000h

9

90000h

8

80000h

7

70000h

6

60000h

5

50000h

4

40000h

3

30000h

2

20000h

1

10000h

0

00000h

Address range

FFFFFh

EFFFFh

DFFFFh

CFFFFh

BFFFFh

AFFFFh

9FFFFh

8FFFFh

7FFFFh

6FFFFh

5FFFFh

4FFFFh

3FFFFh

2FFFFh

1FFFFh

0FFFFh

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