M29W040-100N6TR View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

M29W040-100N6TR

4 Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory

STMicroelectronics 

M29W040

Figure 10. Data Polling Flowchart

Figure 11. Data Toggle Flowchart

START

READ DQ5 & DQ7

at VALID ADDRESS

DQ7

=

YES

DATA

NO

NO DQ5

=1

YES

READ DQ7

DQ= 7 YES

DATA

NO

FAIL

PASS

AI01369

START

READ

DQ5 & DQ6

DQ= 6

NO

TOGGLE

YES

NO DQ5

=1

YES

READ DQ6

DQ= 6

NO

TOGGLE

YES

FAIL

PASS

AI01370

Table 16. Program, Erase Times and Program, Erase Endurance Cycles

(TA = 0 to 70°C; VCC = 2.7V to 3.6V)

Parameter

M29W040

Min

Typ

Chip Program (Byte)

6

Chip Erase (Preprogrammed)

2.5

Chip Erase

8.5

Block Erase (Preprogrammed)

1.5

Block Erase

2

Byte Program

12

Program/Erase Cycles (per Block)

100,000

Max

30

30

2200

Unit

sec

sec

sec

sec

sec

µs

cycles

22/31

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