M29F800DB55N6E View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

M29F800DB55N6E

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

STMicroelectronics 

Common Flash Interface (CFI)

M29F800DT

Table 24. Device Geometry Definition

Address

x16 x8

Data

Description

Value

27h 4Eh 0014h Device Size = 2n in number of bytes

1 MByte

28h 50h 0002h

Flash Device Interface Code description

29h 52h 0000h

x8, x16

Async.

2Ah 54h 0000h Maximum number of bytes in multi-byte program or page = 2n

NA

2Bh 56h 0000h

Number of Erase Block Regions within the device.

2Ch 58h 0004h It specifies the number of regions within the device containing

4

contiguous Erase Blocks of the same size.

2Dh 5Ah 0000h Region 1 Information

1

2Eh 5Ch 0000h Number of identical size erase block = 0000h+1

2Fh 5Eh 0040h Region 1 Information

30h 60h 0000h Block size in Region 1 = 0040h * 256 byte

16 Kbyte

31h 62h 0001h Region 2 Information

2

32h 64h 0000h Number of identical size erase block = 0001h+1

33h 66h 0020h Region 2 Information

34h 68h 0000h Block size in Region 2 = 0020h * 256 byte

8 Kbyte

35h 6Ah 0000h Region 3 Information

1

36h 6Ch 0000h Number of identical size erase block = 0000h+1

37h 6Eh 0080h Region 3 Information

38h 70h 0000h Block size in Region 3 = 0080h * 256 byte

32 Kbyte

39h 72h 000Eh Region 4 Information

15

3Ah 74h 0000h Number of identical-size erase block = 000Eh+1

3Bh 76h 0000h Region 4 Information

3Ch 78h 0001h Block size in Region 4 = 0100h * 256 byte

64 Kbyte

44/53

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