M29F800DB70N6E View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
M29F800DB70N6E Datasheet PDF : 53 Pages
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M29F800DT
Common Flash Interface (CFI)
Table 22. CFI Query Identification String(1)
Address
x16 x8
Data
Description
Value
10h 20h 0051h
"Q"
11h 22h 0052h Query Unique ASCII String "QRY"
"R"
12h 24h 0059h
"Y"
13h 26h 0002h Primary Algorithm Command Set and Control Interface ID
AMD
14h 28h 0000h code 16 bit ID code defining a specific algorithm
Compatible
15h
16h
2Ah 0040h Address for Primary Algorithm extended Query table (see
2Ch 0000h Table 24)
P = 40h
17h 2Eh 0000h Alternate Vendor Command Set and Control Interface ID
18h 30h 0000h Code second vendor - specified algorithm supported
NA
19h 32h 0000h Address for Alternate Algorithm extended Query table
NA
1Ah 34h 0000h
1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
Table 23. CFI Query System Interface Information
Address
x16 x8
Data
Description
Value
VCC Logic Supply Minimum Program/Erase voltage
1Bh 36h 0045h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
4.5V
VCC Logic Supply Maximum Program/Erase voltage
1Ch 38h 0055h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
5.5V
1Dh 3Ah 0000h VPP [Programming] Supply Minimum Program/Erase voltage
NA
1Eh 3Ch 0000h VPP [Programming] Supply Maximum Program/Erase voltage
1Fh 3Eh 0004h Typical timeout per single byte/word program = 2n µs
NA
16µs
20h 40h 0000h Typical timeout for minimum size write buffer program = 2n µs
NA
21h 42h 000Ah Typical timeout per individual block erase = 2n ms
1s
22h 44h 0000h Typical timeout for full chip erase = 2n ms
see note(1)
23h 46h 0004h Maximum timeout for byte/word program = 2n times typical
256µs
24h 48h 0000h Maximum timeout for write buffer program = 2n times typical
NA
25h 4Ah 0003h Maximum timeout per individual block erase = 2n times typical
8s
26h 4Ch 0000h Maximum timeout for chip erase = 2n times typical
see note(1)
1. Not supported in the CFI
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