M29F800DB55N6 View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

M29F800DB55N6

8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory

STMicroelectronics 

M29F800DT

DC and AC parameters

Table 11. DC characteristics

Symbol

Parameter

Test condition

ILI Input Leakage Current

ILO Output Leakage Current

ICC1 Supply Current (Read)

ICC2 Supply Current (Standby) TTL

ICC3 Supply Current (Standby) CMOS

ICC4(1) Supply Current (Program/Erase)

VIL Input Low voltage

VIH Input High voltage

VOL Output Low voltage

VOH Output High voltage TTL CMOS

VID Identification voltage

IID Identification Current

VLKO Program/Erase Lockout Supply voltage

1. Sampled only, not 100% tested.

0V ≤VIN ≤VCC

0V ≤VOUT ≤VCC

E = VIL, G = VIH, f = 6MHz

E = VIH

E = VCC ±0.2V, RP = VCC ±0.2V

Program/Erase Controller active

IOL = 5.8mA

IOH = –2.5mA

A9 = VID

Min

–0.5

2

2.4

11.5

3.2

Max Unit

±1

µA

±1

µA

20

mA

2

mA

150

µA

20

mA

0.8

V

VCC + 0.5 V

0.45

V

V

12.5

V

100

µA

4.2

V

Figure 10. Read Mode AC waveforms

A0-A18/

A–1

E

G

DQ0-DQ7/

DQ8-DQ15

BYTE

tAVQV

tAVAV

VALID

tELQV

tELQX

tGLQX

tGLQV

tBHQV

tELBL/tELBH

tAXQX

tEHQZ

tEHQX

tGHQX

tGHQZ

VALID

tBLQZ

AI06154

29/53

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