M25P20-VMN6TG_X View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

M25P20-VMN6TG_X

2 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface

STMicroelectronics 

DC and AC parameters

M25P20

Table 14. DC Characteristics (Device Grade 3)

Symbol

Parameter

Test Condition (in addition to

those in Table 10)

Min.(1)

Max.(1)

Unit

ILI Input Leakage Current

ILO Output Leakage Current

ICC1 Standby Current

ICC2 Deep Power-down Current

ICC3 Operating Current (READ)

S = VCC, VIN = VSS or VCC

S = VCC, VIN = VSS or VCC

C = 0.1VCC / 0.9.VCC at 25MHz,

Q = open

C = 0.1VCC / 0.9.VCC at 20MHz,

Q = open

± 2 µA

± 2 µA

100 µA

50 µA

8

mA

4

mA

ICC4 Operating Current (PP)

ICC5 Operating Current (WRSR)

ICC6 Operating Current (SE)

ICC7 Operating Current (BE)

VIL Input Low Voltage

VIH Input High Voltage

VOL Output Low Voltage

VOH Output High Voltage

S = VCC

S = VCC

S = VCC

S = VCC

IOL = 1.6 mA

IOH = –100 µA

15 mA

15 mA

15 mA

15 mA

– 0.5 0.3VCC V

0.7VCC VCC+0.4 V

0.4

V

VCC–

0.2

V

2. This is preliminary data

Table 15. Instruction Times (Device Grade 6)

Test conditions specified in Table 10 and Table 17

Symbol Alt.

Parameter

Min. Typ. Max. Unit

tW

tPP(1)

Write Status Register Cycle Time

Page Program Cycle Time (256 Bytes)

Page Program Cycle Time (n Bytes)

5

15 ms

1.4

0.4+

5

ms

n*1/256

tSE

Sector Erase Cycle Time

0.8

3

s

tBE

Bulk Erase Cycle Time

2.5

6

s

1. When using the Page Program (PP) instruction to program consecutive Bytes, optimized timings are

obtained with one sequence including all the Bytes versus several sequences of only a few Bytes. (1 ≤n ≤

256)

38/50

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