LTC4160EPDC-PBF View Datasheet(PDF) - Linear Technology

Part Name

Description

MFG CO.

LTC4160EPDC-PBF

Switching Power Manager with USB On-The-Go And Overvoltage Protection

Linear Technology 

LTC4160/LTC4160-1

OPERATION

TO USB

OR WALL

ADAPTER

13

VBUS

ISWITCH/N

VBUS

VOLTAGE

CONTROLLER

–

+

5.1V

PWM AND

GATE DRIVE

CLPROG

17

1.18V

AVERAGE VBUS OUTPUT

– CURRENT LIMIT

CONTROLLER

+

1

OVGATE

2

OVSENS

+–

s2

6V

OVERVOLTAGE PROTECTION

0.3V

+–

3.6V

VOUT VOLTAGE

CONTROLLER

BATTERY CHARGER

1V

VFLOAT

IBAT/1000

14

SW

VOUT

12

IDEAL

DIODE

+

OmV

–

15mV +–

10

IDGATE

11

BAT

8

PROG

BATTERY POWER

Figure 3. PowerPath Block Diagram – USB On-The-Go

3.5V TO

(BAT + 0.3V)

TO SYSTEM LOAD

+ SINGLE CELL

Li-Ion

41601 F03

current when the NMOS switch is on. This will cause the

inductor current to run away and the voltage on CLPROG

to rise. When CLPROG reaches 1.2V the switching of the

synchronous PMOS is terminated and VOUT is applied

statically to its gate. This ensures that the inductor current

will have sufficient negative slope during the time current

is flowing out of the VBUS pin. The PMOS will resume

switching when CLPROG drops down to 1.15V.

The PMOS switch is enabled when VBUS rises above

VOUT + 180mV and is disabled when it falls below

VOUT + 70mV to prevent the inductor current from run-

ning away when not in current limit. If the PMOS switch is

disabled for more than 7.2ms then the switcher will shut

off, the FAULT pin will go low and a short circuit fault will be

declared. To re-enable step-up mode, the ENOTG pin, with

ID high, must be cycled low and then high or the ID pin, with

ENOTG grounded, must be cycled high and then low.

Ideal Diode(s) from BAT to VOUT

The LTC4160/LTC4160-1 each have an internal ideal diode

as well as a controller for an external ideal diode. Both the

internal and the external ideal diodes are always on and

will respond quickly whenever VOUT drops below BAT.

16

If the load current increases beyond the power allowed

from the bidirectional switching regulator, additional

power will be pulled from the battery via the ideal diode(s).

Furthermore, if power to VBUS (USB or wall adapter) is

removed, then all of the application power will be provided

by the battery via the ideal diode(s). The ideal diode(s) will

prevent VOUT from drooping with only the storage capaci-

tance required for the bidirectional switching regulator. The

internal ideal diode consists of a precision amplifier that

activates a large on-chip P-channel MOSFET whenever

2200

2000

1800

VISHAY Si2333

OPTIONAL EXTERNAL

IDEAL DIODE

1600

1400

1200

1000

LTC4160/

LTC4160-1

IDEAL DIODE

800

600

ON

400

SEMICONDUCTOR

MBRM120LT3

200

0

0 60 120 180 240 300 360 420 480

FORWARD VOLTAGE (mV) (BAT – VOUT)

41601 F04

Figure 4. Ideal Diode V-I Characteristics

41601f

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