OM6508SA View Datasheet(PDF) - Omnirel Corp => IRF
Part Name
Description
MFG CO.
OM6508SA Datasheet PDF : 2 Pages
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PRELIMINARY DATA: OM6508SA
IGBT CHARACTERISTICS
Parameter - OFF (see Note 1)
Min. Typ. Max. Units Test Conditions
V(BR)CES Collector Emitter
Breakdown Voltage
ICES Zero Gate Voltage
Drain Current
IGES Gate Emitter Leakage
Current
Parameter - ON
500
V VCE = 0
IC = 250 µA
0.25 mA VCE = Max. Rat., VGE = 0
1.0 mA VCE = 0.8 Max. Rat., VGE = 0
TC = 125°C
±100 nA VGE = ±20 V
VCE = 0 V
VGE(th)
VCE(sat)
Gate Threshold Voltage
Collector Emitter
Saturation Voltage
VCE(sat) Collector Emitter
Saturation Voltage
Dynamic
2.0
4.0 V VCE = VGE, IC = 250 µA
3.0
V VGE = 15 V, IC = 5 A
TC = 25°C
2.8 3.0 V VGE = 15 V, IC = 5 A
TC = 100°C
gfs
Forward Transductance
2.0
S VCE = 20 V, IC = 5 A
Cies Input Capacitance
260
pF VGE = 0
Coes Output Capacitance
50
pF VCE = 25 V
Cres Reverse Transfer Capacitance
20
pF f = 1 mHz
Switching-Resistive Load
Td(on) Turn-On Time
tr
Rise Time
Switching-Inductive Load
37
nS VCC = 400 V, IC = 5 A
150
nS VGE = 15 V, Rg = 47
tr(Volt) Off Voltage Rise Time
tf
Fall Time
tcross Cross-Over Time
Eoff Turn-Off Losses
DIODE CHARACTERISTICS
.35
µS VCEclamp = 400 V, IC = 5 A
.81
µS VGE = 15 V, Rg = 100
1.2
µS L = 0.1 mH, Tj = 100°C
.95
mJ
Vf
Maximum Forward Voltage
Ir
Maximum Reverse Current
trr
Reverse Recovery Time
1.5 V IF = 8 A, TC = 25°C
1.4 V IF = 8 A, TC = 150°C
150 µA VR = 600 V, TC = 25°C
1.5 mA VR = 480 V, TC = 125°C
35 nS IF = 1 A, di / dt = -15 A µ/S
VR = 30 V, Tj = 25°C
Note 1: Limited by diode Ir characteristic.
PRELIMINARY DATA: OM6509SA
IGBT CHARACTERISTICS
Parameter - OFF (see Note 1)
Min. Typ. Max. Units Test Conditions
V(BR)CES Collector Emitter
Breakdown Voltage
ICES Zero Gate Voltage
Drain Current
IGES Gate Emitter Leakage
Current
Parameter - ON
500
V VCE = 0
IC = 250 µA
0.25 mA VCE = Max. Rat., VGE = 0
1.0 mA VCE = 0.8 Max. Rat., VGE = 0
TC = 125°C
±100 nA VGE = ±20 V
VCE = 0 V
VGE(th)
VCE(sat)
Gate Threshold Voltage
Collector Emitter
Saturation Voltage
VCE(sat) Collector Emitter
Saturation Voltage
Dynamic
2.0
4.0 V VCE = VGE, IC = 250 µA
3.0 2.7 V VGE = 15 V, IC = 10 A
TC = 25°C
2.8 3.0 V VGE = 15 V, IC = 10 A
TC = 100°C
gfs
Forward Transductance
2.5
Cies Input Capacitance
Coes Output Capacitance
Cres Reverse Transfer Capacitance
Switching-Resistive Load
S VCE = 20 V, IC = 10 A
950 pF VGE = 0
140 pF VCE = 25 V
80 pF f = 1 mHz
Td(on) Turn-On Time
Tr
Rise Time
Td(off) Turn-Off Delay Time
Tf
Fall Time
Switching-Inductive Load
150 nS
1000 nS
700 nS
1500 nS
VCC = 400 V, IC = 10 A
VGE = 15 V, Rg = 100
Td(off) Turn-Off Delay Time
tf
Fall Time
tcross Cross-Over Time
Eoff Turn-Off Losses
DIODE CHARACTERISTICS
1.2 µS VCEclamp = 350 V, IC = 10 A
1.5 µS VGE = 15 V, Rg = 100
2.0 µS L = 180 µH, Tj = 100°C
4.0 mJ
Vf
Maximum Forward Voltage
Ir
Maximum Reverse Current
trr
Reverse Recovery Time
1.4 V IF = 16 A, TC = 25°C
1.5 V IF = 16 A, TC = 150°C
500 µA VR = 600 V, TC = 25°C
3.0 mA VR = 480 V, TC = 125°C
35 nS IF = 1 A, di / dt = -15 A µ/S
VR = 30 V, Tj = 25°C
Note 1: Limited by diode Ir characteristic.
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