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LFECP20E-3TN100I View Datasheet(PDF) - Lattice Semiconductor

Part Name
Description
MFG CO.
LFECP20E-3TN100I
Lattice
Lattice Semiconductor 
LFECP20E-3TN100I Datasheet PDF : 163 Pages
First Prev 41 42 43 44 45 46 47 48 49 50 Next Last
Lattice Semiconductor
DC and Switching Characteristics
LatticeECP/EC Family Data Sheet
sysI/O Single-Ended DC Electrical Characteristics
Input/Output
VIL
Standard Min. (V) Max. (V)
VIH
VOL Max. VOH Min.
Min. (V) Max. (V) (V)
(V)
IOL1
(mA)
IOH1
(mA)
LVCMOS 3.3
-0.3
0.8
2.0
3.6
0.4
VCCIO - 0.4
20, 16, 12,
8, 4
-20, -16, -12,
-8, -4
0.2
VCCIO - 0.2
0.1
-0.1
LVTTL
-0.3
0.8
2.0
3.6
0.4
VCCIO - 0.4
20, 16, 12,
8, 4
-20, -16, -12,
-8, -4
0.2
VCCIO - 0.2
0.1
-0.1
LVCMOS 2.5
-0.3
0.7
1.7
3.6
0.4
VCCIO - 0.4
20, 16, 12,
8, 4
-20, -16, -12,
-8, -4
0.2
VCCIO - 0.2
0.1
-0.1
LVCMOS 1.8
-0.3 0.35VCCIO 0.65VCCIO
3.6
0.4
VCCIO - 0.4 16, 12, 8, 4 -16, -12, -8, -4
0.2
VCCIO - 0.2
0.1
-0.1
LVCMOS 1.5
-0.3 0.35VCCIO 0.65VCCIO
3.6
0.4
VCCIO - 0.4
8, 4
0.2
VCCIO - 0.2
0.1
-8, -4
-0.1
LVCMOS 1.2
-0.3
0.35VCC
0.65VCC
3.6
0.4
VCCIO - 0.4
6, 2
0.2
VCCIO - 0.2
0.1
-6, -2
-0.1
PCI
-0.3
0.3VCCIO
0.5VCCIO
3.6 0.1VCCIO 0.9VCCIO
1.5
-0.5
SSTL3 class I
-0.3 VREF - 0.2 VREF + 0.2
3.6
0.7
VCCIO - 1.1
8
-8
SSTL3 class II
-0.3 VREF - 0.2 VREF + 0.2
3.6
0.5
VCCIO - 0.9
16
-16
SSTL2 class I
-0.3 VREF - 0.18 VREF + 0.18 3.6
0.54 VCCIO - 0.62
7.6
-7.6
SSTL2 class II
-0.3 VREF - 0.18 VREF + 0.18 3.6
0.35 VCCIO - 0.43
15.2
-15.2
SSTL18 class I
-0.3 VREF - 0.125 VREF + 0.125 3.6
0.4
VCCIO - 0.4
6.7
-6.7
HSTL15 class I
-0.3 VREF - 0.1 VREF + 0.1
3.6
0.4
VCCIO - 0.4
8
-8
HSTL15 class III -0.3 VREF - 0.1 VREF + 0.1 3.6
0.4
VCCIO - 0.4
24
-8
HSTL18 class I
-0.3 VREF - 0.1 VREF + 0.1
3.6
0.4
VCCIO - 0.4
9.6
-9.6
HSTL18 class II
-0.3 VREF - 0.1 VREF + 0.1
3.6
0.4
VCCIO - 0.4
16
-16
HSTL18 class III -0.3 VREF - 0.1 VREF + 0.1 3.6
0.4
VCCIO - 0.4
24
-8
1. The average DC current drawn by I/Os between GND connections, or between the last GND in an I/O bank and the end of an I/O bank, as
shown in the logic signal connections table shall not exceed n * 8mA. Where n is the number of I/Os between bank GND connections or
between the last GND in a bank and the end of a bank.
3-6

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