IS25LD256C-JDLE View Datasheet(PDF) - Integrated Silicon Solution

Part Name

Description

MFG CO.

IS25LD256C-JDLE

256Kbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface

Integrated Silicon Solution 

DEVICE OPERATION (CONTINUED)

IS25LD256C

PAGE_PROG COMMAND (PAGE PROGRAM) OPERATION

The Page Program (PAGE_PROG) instruction allows WIP bit in Status Register via a RDSR instruction. If

up to 256 bytes data to be programmed into memory in the WIP bit is “1”, the program operation is still in

a single operation. The destination of the memory to be progress. If WIP bit is “0”, the program operation has

programmed must be outside the protected memory completed.

area set by the Block Protection (BP2, BP1, BP0) bits.

A PAGE_PROG instruction which attempts to program If more than 256 bytes data are sent to a device, the

into a page that is write-protected will be ignored.

address counter rolls over within the same page, the

Before the execution of PAGE_PROG instruction, the previously latched data are discarded, and the last 256

Write Enable Latch (WEL) must be enabled through a bytes data are kept to be programmed into the page.

Write Enable (WREN) instruction.

The starting byte can be anywhere within the page.

When the end of the page is reached, the address will

The PAGE_PROG instruction code, three address

wrap around to the beginning of the same page. If the

bytes and program data (1 to 256 bytes) are input via data to be programmed are less than a full page, the

the Sl line. Program operation will start immediately data of all other bytes on the same page will remain

after the CE# is brought high, otherwise the

unchanged.

PAGE_PROG instruction will not be executed. The

internal control logic automatically handles the

Note: A program operation can alter “1”s into “0”s, but

programming voltages and timing. During a program an erase operation is required to change “0”s back to

operation, all instructions will be ignored except the “1”s. A byte cannot be reprogrammed without first

RDSR instruction. The progress or completion of the erasing the whole sector or block.

program operation can be determined by reading the

Figure 15. Page Program Sequence

SIO

Integrated Silicon Solution, Inc.- www.issi.com

20

Rev. A

09/11/2012

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