C8051F98X View Datasheet(PDF) - Silicon Laboratories

Part Name

Description

MFG CO.

C8051F98X

Ultra Low Power, 8-2 kB Flash, Capacitive Sensing MCU

Silicon Laboratories 

C8051F99x-C8051F98x

4.2. Electrical Characteristics

Table 4.2. Global Electrical Characteristics

–40 to +85 °C, 25 MHz system clock unless otherwise specified. See "AN358: Optimizing Low Power Operation of the

‘F9xx" for details on how to achieve the supply current specifications listed in this table.

Parameter

Supply Voltage (VDD)

Conditions

Min Typ Max

1.8 2.4 3.6

Minimum RAM Data 

Retention Voltage1

not in sleep mode

in sleep mode

— 1.4 —

— 0.3 0.45

SYSCLK (System Clock)2

TSYSH (SYSCLK High Time)

TSYSL (SYSCLK Low Time)

Specified Operating 

Temperature Range

0 — 25

18 — —

18 — —

–40 — +85

Digital Supply Current—CPU Active (Normal Mode, fetching instructions from Flash)

IDD 3, 4, 5

VDD = 1.8–3.6 V, F = 24.5 MHz

(includes precision oscillator current)

— 3.6 4.5

VDD = 1.8–3.6 V, F = 20 MHz

(includes low power oscillator current)

— 3.1 —

VDD = 1.8 V, F = 1 MHz

VDD = 3.6 V, F = 1 MHz

— 225 —

— 290 —

(includes external oscillator/GPIO current)

VDD = 1.8–3.6 V, F = 32.768 kHz

— 84 —

(includes SmaRTClock oscillator current)

IDD Frequency 

Sensitivity1, 3, 5

VDD = 1.8–3.6 V, T = 25 °C, F < 14 MHz — 174 —

(Flash oneshot active, see Section 14.6)

VDD = 1.8–3.6 V, T = 25 °C, F > 14 MHz — 88 —

(Flash oneshot bypassed, see Section

14.6)

Units

V

V

MHz

ns

ns

°C

mA

mA

µA

µA

µA

µA/MHz

µA/MHz

Rev. 1.0

47

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