C8051T600-GS(2007) View Datasheet(PDF) - Silicon Laboratories

Part Name

Description

MFG CO.

C8051T600-GS
(Rev.:2007)

Mixed Signal OTP EPROM MCU Family

Silicon Laboratories 

C8051T600/1/2/3/4/5

3. Global Electrical Characteristics

Table 3.1. Global DC Electrical Characteristics

–40 to +85 °C, 25 MHz System Clock unless otherwise specified.

Parameter

Supply Voltage1

Conditions

Regulator in Normal Mode

Regulator in Bypass Mode

Min Typ Max Units

1.8 3.0 3.6

V

1.7 1.8 1.9

V

Digital Supply Current with CPU Active VDD = 1.8 V, Clock = 25 MHz

VDD = 1.8 V, Clock = 1 MHz2

VDD = 3.0 V, Clock = 25 MHz

VDD = 3.0 V, Clock = 1 MHz2

— 4.3 — mA

TBD

mA

5.0

mA

TBD

mA

Digital Supply Current with CPU Inac- VDD = 1.8 V, Clock = 25 MHz2

— TBD —

mA

tive (not accessing EPROM)

VDD = 1.8 V, Clock = 1 MHz2

VDD = 3.0 V, Clock = 25 MHz2

TBD

TBD

TBD

mA

mA

mA

VDD = 3.0 V, Clock = 1 MHz2

Digital Supply Current (shutdown)

Oscillator not running,

Internal Regulator Off

— TBD — µA

Digital Supply RAM Data Retention

Voltage

— TBD —

V

Specified Operating Temperature

Range

–40 — +85 °C

SYSCLK (system clock frequency)3

0

—

25 MHz

SYSCLK Duty Cycle

40

—

60

%

Notes:

1. Analog performance is degraded when VDD is below 1.8 V.

2. Specifications below 2 MHz or with CPU Inactive assume memory power controller is enabled.

3. SYSCLK must be at least 32 kHz to enable debugging.

Other electrical characteristics tables are found in the data sheet section corresponding to the associated

peripherals. For more information on electrical characteristics for a specific peripheral, refer to the page

indicated in Table 3.2.

24

Rev. 0.5

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