C8051F380/1/2/3/4/5/6/7/C
Table 5.7. Internal High-Frequency Oscillator Electrical Characteristics
VDD = 2.7 to 3.6 V; TA = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Test Condition
Min
Typ
Max
Oscillator Frequency
IFCN = 11b
47.3
48
48.7
Oscillator Supply Current
(from VDD)
25 °C, VDD = 3.0 V,
OSCICN.7 = 1,
OCSICN.5 = 0
—
900
—
Power Supply Sensitivity
Constant Temperature
—
110
—
Temperature Sensitivity
Constant Supply
—
25
—
Table 5.8. Internal Low-Frequency Oscillator Electrical Characteristics
VDD = 2.7 to 3.6 V; TA = –40 to +85 °C unless otherwise specified; Using factory-calibrated settings.
Parameter
Test Condition
Min
Typ
Max
Oscillator Frequency
OSCLD = 11b
75
80
85
Oscillator Supply Current
(from VDD)
Power Supply Sensitivity
25 °C, VDD = 3.0 V,
—
4
—
OSCLCN.7 = 1
Constant Temperature
—
0.05
—
Temperature Sensitivity
Constant Supply
—
65
—
Table 5.9. External Oscillator Electrical Characteristics
VDD = 2.7 to 3.6 V; TA = –40 to +85 °C unless otherwise specified.
Parameter
Test Condition
Min
Typ
Max
External Crystal Frequency
0.02
—
30
External CMOS Oscillator
Frequency
0
—
48
Unit
MHz
µA
ppm/V
ppm/°C
Unit
kHz
µA
%/V
ppm/°C
Unit
MHz
MHz
Rev. 1.4
41