BF999 View Datasheet(PDF) - Siemens AG

Part Name

Description

MFG CO.

BF999

Silicon N Channel MOSFET Triode

Siemens AG 

BF 999

Gate forward transfer admittance y21s

VDS = 10 V, VGS = 0,

IDSS = 10 mA, (common-source)

Output admittance y22s

VDS = 10 V, VGS = 0,

IDSS = 10 mA, (common-source)

Test circuit for power gain and noise figure

f = 200 MHz

Semiconductor Group

5

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