High Dynamic Range Low Noise Amplifier
800 - 1000 MHz
AM50-0003
V4
Electrical Specifications: TA = +25°C, Z0 = 50 Ω, F=900 MHz, Pin = -30 dBm
Parameter
Gain
Noise Figure
Input VSWR
Output VSWR
Output 1 dB Compression
Input IP3
Reverse Location
Test Conditions
5 V, 60 mA4
3 V, 20 mA
5 V, 60 mA4
3 V, 20 mA
—
—
5 V, 60 mA4
3 V, 20 mA
5 V, 60 mA4
3 V, 20 mA
—
Units
dB
dB
dB
dB
Ratio
Ratio
dBm
dBm
dBm
dBm
dB
Min
13
12
—
—
—
—
—
—
12.5
4.0
—
Typ
15
13.5
1.20
1.25
2.0:1
1.5:1
16.5
8.5
15
6.5
25
4. Using external 15 Ohm resistor. See functional bolck diagram herein.
Max
—
—
1.50
1.50
—
—
—
—
—
—
—
Functional Schematic
VDD
L1
IN
C1
R1
L2
C2
7
3
6
1,4,5,8
2
R2
(See Note 6)
OUT
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive to
electrostatic discharge (ESD) and can be damaged by
static electricity. Proper ESD control techniques
should be used when handling these devices.
Component List 5
Part Value Case Manufacturer Purpose
Size
C1 47 pF 0603
Murata
DC Block
C2 470 pF 0603
Murata
By-Pass
L1 12 nH 0603
Coilcraft
Tuning
L2 12 nH 0603
Coilcraft
RF Choke
R1 5.1K 0603
Ohms
Panasonic
DC Return
R2
See
0603
Note 6
Panasonic
Optional current
control
5. All External circuitry parts are readily available, low cost
surface mount components (.060 in. x .030 in. or .080 in.
x .050 in.)
6. Pin 2 allows use of an external resistor to ground for
optional, higher current. For 20 mA operation, no resistor is
used.
For IDD ~ 40 mA, R2 = 43 ohms;
IDD ~ 60 mA, R2 = 15 ohms;
IDD ~ 80 mA, R2 = 10 ohms.
2
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product(s) or information contained herein without notice. M/A-COM makes
no warranty, representation or guarantee regarding the suitability of its
products for any particular purpose, nor does M/A-COM assume any liability
whatsoever arising out of the use or application of any product(s) or
information.
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