ACST6-7ST View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
ACST6-7ST Datasheet PDF : 10 Pages
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ACST6
Figure 10: Non repetitive surge peak on-state
current for a sinusoidal pulse with width tp <
10ms, and corresponding value of I2t
ITSM(A), I2t (A2s)
1000
100
dI/dt limitation:
100A/µs
Tj initial=25°C
ITSM
10
1
0.01
tp(ms)
0.10
1.00
I2t
10.00
Figure 11: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
IGT, IH,IL[Tj] / IGT, IH, IL[Tj=25°C]
3.0
2.5
2.0
IGT QIII
1.5
1.0
IGT QI, QII, IH & IL
0.5
Tj(°C)
0.0
-40 -20
0
20
40
60
80 100 120 140
Figure 12: Relative variation of critical rate of
decrease of main current versus reapplied (dV/
dt)c (typical values)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
4.0
3.5
Tj = 125°C
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.1
(dV/dt)c (V/µs)
1.0
10.0
100.0
Figure 13: Relative variation of critical rate of
decrease of main current versus junction tem-
perature
(dI/dt)c[Tj] / (dI/dt)c[Tj=125°C]
6
5
4
3
2
1
Tj(°C)
0
0
25
50
75
100
125
Figure 14: Relative variation of dV/dt immunity
versus junction temperature for different val-
ues of gate to com resistance (gate open is the
reference value)
dV/dt[Tj] / dV/dt[Tj=125°C]
4.0
3.5
Rgk = 470W
3.0
Rgk < 220W
2.5
2.0
Rgk = 1kW
1.5
Gate open
1.0
0.5
Tj(°C)
0.0
0
25
50
75
100
125
150
Figure 15: Thermal resistance junction to
ambient versus copper surface under tab
(printed circuit board FR4, copper thickness:
35µm) (D2PAK)
Rth(j-a)(°C/W)
70
60
50
40
30
20
10
S(Cu)(cm²)
0
0
2
4
6
8 10 12 14 16 18 20
6/10
®
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