ACST4-7SFP(2003) View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
ACST4-7SFP Datasheet PDF : 9 Pages
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ACST4 Series
Fig. 7: Relative variation of critical rate of decrease
of main current versus junction temperature.
Fig. 8: Surge peak on-state current versus number
of cycles.
(dI/dt)c [Tj] / (dI/dt)c [Tj = 125°C]
6
5
4
3
2
1
Tj(°C)
0
25
50
75
Vout=300V
100
125
ITSM(A)
35
30
25
20
15
10
5
0
1
Non repetitive
Tj initial=25°C
Repetitive
TC=100°C
Number of cycles
10
100
t=20ms
1000
Fig. 9: Non repetitive surge peak on-state current
for a sinusoidal pulse with width tp < 10ms, and
corresponding value of I²t.
ITSM(A), I²t (A²s)
1000
dI/dt limitation:
50A/µs
Tj initial=25°C
100
ITSM
10
I²t
Fig. 10: On-state characteristics (maximum
values).
ITM(A)
100.00
Tj max. :
Vto= 0.90 V
Rd= 100 mΩ
10.00
1.00
Tj=125°C
Tj=25°C
1
0.01
tp(ms)
0.10
1.00
10.00
VTM(V)
0.10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (printed circuit
board FR4, copper thickness: 35µm)
Rth(j-a)(°C/W)
100
DPAK
90
80
70
60
50
40
30
20
10
0
0
S(cm²)
5
10
15
20
25
30
35
40
7/9
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