datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

AAT1112IWP-0.6-T1 View Datasheet(PDF) - Analog Technology Inc

Part Name
Description
MFG CO.
AAT1112IWP-0.6-T1
Analog-Technology
Analog Technology Inc 
AAT1112IWP-0.6-T1 Datasheet PDF : 20 Pages
First Prev 11 12 13 14 15 16 17 18 19 20
AAT1112
1.5A, 1.4MHz Step-Down Converter
Input Capacitor
Input Ripple VPP = 50mV
1
1
CIN =
VPP -
IO1 + IO2
ESR⎞⎠
·
4
·
FS
=
50mV
1.5A
= 7.3µF; use 10µF
- 5mΩ⎞⎠ · 4 · 1.2MHz
I = RMS(MAX)
IO
2
= 0.75Arms
P = esr · IRMS2 = 5mΩ · (0.75A)2 = 3mW
AAT1112 Losses
Total losses can be estimated by calculating the dropout (VIN = VO) losses where the power MOSFET RDS(ON)
will be at the maximum value. All values assume an 85°C ambient temperature and a 120°C junction temper-
ature with the TDFN 50°C/W package.
PLOSS = IO12 · RDS(ON)H = 1.5A2 · 0.16Ω = 0.36W
TJ(MAX) = TAMB + ΘJA · PLOSS = 85°C + (50°C/W) · 360mW = 103°C
The total losses are also investigated at the nominal lithium-ion battery voltage (3.6V). The simplified version
of the RDS(ON) losses assumes that the N-channel and P-channel RDS(ON) are equal.
PTOTAL = IO2 · RDS(ON) + (tsw · FS · IO + IQ) · VIN
= 1.5A2 · 152mΩ + (5ns · 1.2MHz · 1.5A + 50μA) · 3.6V = 375mW
TJ(MAX) = TAMB + ΘJA · PLOSS = 85°C + (50°C/W) · 375mW = 104°C
1112.2007.01.1.1
17

Share Link: 

datasheetbank.com [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]