SavantIC Semiconductor
Silicon PNP Power Transistors
Product Specification
2SA968 2SA968A 2SA968B
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter
breakdown voltage
2SA968
2SA968A IC=-10mA; IB=0
2SA968B
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA; IC=0
VCEsat Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
VBE
Base-emitter on voltage
IC=-500mA ; VCE=-5V
ICBO
Collector cut-off current
VCB=-160V ;IE=0
IEBO
Emitter cut-off current
hFE
DC current gain
Cob
Output capacitance
fT
Transition frequency
VEB=-5V; IC=0
IC=-100mA ; VCE=-5V
IE=0 ; VCB=-10V,f=1MHz
IC=-100mA ; VCE=10V
MIN TYP. MAX UNIT
-160
-180
V
-200
-5
V
-1.5
V
-1.0
V
-1.0
µA
-1.0
µA
70
240
30
pF
100
MHz
hFE Classifications
O
Y
70-140
120-240
2