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2SA1204(2006) View Datasheet(PDF) - Toshiba

Part Name
Description
MFG CO.
2SA1204 Datasheet PDF : 4 Pages
1 2 3 4
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1204
2SA1204
Audio Frequency Amplifier Applications
Unit: mm
High DC current gain: hFE = 100 to 320
Suitable for output stage of 1 watts amplifier
Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SC2884
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
35
V
VCEO
30
V
VEBO
5
V
IC
800
mA
IB
160
mA
PC
500
PC
mW
1000
(Note 1)
Tj
150
°C
Tstg
55 to 150
°C
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
PW-MINI
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2006-11-09

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