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VND810MSP View Datasheet(PDF) - STMicroelectronics

Part Name
Description
MFG CO.
VND810MSP
ST-Microelectronics
STMicroelectronics 
VND810MSP Datasheet PDF : 19 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
VND810MSP
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage
41
V
- VCC Reverse DC Supply Voltage
- 0.3
V
- IGND DC Reverse Ground Pin Current
- 200
mA
IOUT
DC Output Current
Internally Limited
A
- IOUT Reverse DC Output Current
-6
A
IIN
DC Input Current
+/- 10
mA
Istat
DC Status Current
+/- 10
mA
Electrostatic Discharge (Human Body Model: R=1.5KΩ; C=100pF)
- INPUT
4000
V
VESD
- STATUS
- OUTPUT
4000
V
5000
V
EMAX
Ptot
Tj
Tc
Tstg
- VCC
Maximum Switching Energy
(L=400mH; RL=0; Vbat=13.5V; Tjstart=150ºC; IL=0.9A)
Power Dissipation TC=25°C
Junction Operating Temperature
Case Operating Temperature
Storage Temperature
5000
V
225
mJ
52
W
Internally Limited
°C
- 40 to 150
°C
- 55 to 150
°C
CONFIGURATION DIAGRAM (TOP VIEW) & SUGGESTED CONNECTIONS FOR UNUSED AND N.C.
PINS
GROUND
6
5
INPUT 1
7
4
STATUS 1
8
3
STATUS 2
9
2
INPUT 2
10
1
11
VCC
OUTPUT 1
OUTPUT 1
N.C.
OUTPUT 2
OUTPUT 2
Connection / Pin Status
Floating
X
To Ground
N.C.
X
X
Output
Input
X
X
Through 10Kresistor
CURRENT AND VOLTAGE CONVENTIONS
IIN1
VIN1
ISTAT1
VSTAT1 IIN2
VIN2 ISTAT2
VSTAT2
INPUT 1
STATUS 1
INPUT 2
VCC
OUTPUT 1
STATUS 2
OUTPUT 2
GND
IGND
IS
VF1 (*) VCC
IOUT1
IOUT2 VOUT1
VOUT2
(*) VFn = VCCn - VOUTn during reverse battery condition
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