M48Z2M1YPL View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
M48Z2M1YPL Datasheet PDF : 17 Pages
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M48Z2M1, M48Z2M1Y
Table 9. Power Down/Up AC Characteristics
Symbol
Parameter(1)
Min
Max
Unit
tER
E Recovery Time
40
120
tF(2)
VPFD (max) to VPFD (min) VCC Fall Time
300
µs
tFB(3)
VPFD (min) to VSO VCC Fall Time
10
µs
tR
VPFD (min) to VPFD (max) VCC Rise Time
0
µs
tWP
Write Protect Time from VCC = VPFD
40
150
µs
Note: 1. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.75 to 5.5V or 4.5 to 5.5V (except where noted).
2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200µs after VCC pass-
es VPFD (min).
3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data.
Table 10. Power Down/Up Trip Points DC Characteristics
Symbol
Parameter(1,2)
Min
Typ
Max
Unit
VPFD Power-fail Deselect Voltage
M48Z2M1
4.5
4.6
4.75
V
M48Z2M1Y
4.2
4.3
4.5
V
VSO
Battery Back-up Switchover Voltage
3.0
V
tDR(3)
Expected Data Retention Time
10
YEARS
Note: 1. All voltages referenced to VSS.
2. Valid for Ambient Operating Temperature: TA = 0 to 70°C; VCC = 4.75 to 5.5V or 4.5 to 5.5V (except where noted).
3. At 25°C
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