ACST8-8CFP View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
ACST8-8CFP Datasheet PDF : 10 Pages
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ACST8
Figure 8: Relative variation of thermal
impedance versus pulse duration (TO-220AB /
D2PAK)
K=[Zth/Rth]
1.E+00
Zth(j-c)
Figure 9: On-state characteristics (maximum
values)
Iout(A)
100
Tj=25°C
Tj=125°C
1.E-01
Zth(j-a)
10
1.E-02
1.E-03
1.E-02
tp(°C)
1.E-01 1.E+00
1.E+01
TO-220AB/D2PAK
1.E+02 1.E+03
Figure 10: Surge peak on-state current versus
number of cycles
ITSM(A)
90
80
70
60
50
40
30
20
10
0
1
Non repetitive
Tj initial=25°C
Repetitive
Tc=90°C
Number of cycles
10
100
t=20ms
1000
Figure 12: Relative variation of gate trigger
current, holding current and latching current
versus junction temperature (typical values)
IGT, IH,IL[Tj/IGT, IH, IL[Tj=25°C]
3.0
2.5
IGT & IH
2.0
1.5
IL
1.0
0.5
Tj(°C)
0.0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
tp(°C)
Tj max. :
Vto = 0.95 V
Rd = 50 mΩ
1
0
1
2
3
4
5
6
Figure 11: Non repetitive surge peak on-state
current for a sinusoidal pulse with width tp <
10ms, and corresponding value of I2t
ITSM(A), I2t (A2s)
1000
Tj initial=25°C
dI/dt limitation:
100A/µs
ITSM
100
I2t
10
0.01
tp(ms)
0.10
1.00
10.00
Figure 13: Relative variation of critical rate of
decrease of main current versus reapplied dV/
dt (typical values)
(dI/dt)c[(dV/dt)c] / Specified (dI/dt)c
5
4
3
2
1
dV/dt(V/µs)
0
0.1
1.0
10.0
100.0
6/10
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