STPS2045C
Figure 7: Junction capacitance versus reverse
voltage applied (typical values, per diode)
C(pF)
1000
F = 1 MHz
VOSC = 30 mVRMS
Tj = 25 °C
500
Characteristics
Figure 8: Forward voltage drop versus forward
current (maximum values, per diode)
200
100
1
2
VR(V)
5
10
20
50
Figure 9: Reverse safe operating area
(tp < 10 µs and Tj < 125 °C)
Iarm(A)
Figure 10: Thermal resistance junction to ambient
versus copper surface under tab for D²PAK
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
0
5
10
Epoxy printed board FR4, eCU= 35 µm
SCu(cm²)
15
20
25
30
35
40
DocID3506 Rev 10
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