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Part Name
Description
K5A50D View Datasheet(PDF) - Toshiba
Part Name
Description
MFG CO.
K5A50D
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
Toshiba
K5A50D Datasheet PDF : 6 Pages
1
2
3
4
5
6
I
D
– V
DS
5
COMMON SOURCE
Tc
=
25°C
PULSE TEST
4
10
7
8
6.5
3
6
2
5.5
1
VGS
=
5 V
0
0
2
4
6
8
DRAIN-SOURCE VOLTAGE V
DS
10
(V)
I
D
– V
GS
10
COMMON SOURCE
VDS
=
20 V
PULSE TEST
8
6
4
25
2
100
Tc
= −
55 °C
0
0
2
4
6
8
GATE-SOURCE VOLTAGE V
GS
10
(V)
⎪
Y
fs
⎪
– I
D
10
COMMON SOURCE
VDS
=
10 V
PULSE TEST
Tc
= −
55 °C
25
1
100
TK5A50D
I
D
– V
DS
10
10
8
COMMON SOURCE
Tc
=
25°C
PULSE TEST
8
7
6
4
6.5
6
2
VGS
=
5 V
0
0
10
20
30
40
50
DRAIN-SOURCE VOLTAGE V
DS
(V)
V
DS
– V
GS
20
COMMON SOURCE
Tc
=
25
℃
PULSE TEST
16
12
8
ID
=
5 A
4
2.5
1.2
0
0
4
8
12
16
20
GATE-SOURCE VOLTAGE V
GS
(V)
R
DS (ON)
– I
D
10
COMMON SOURCE
Tc
=
25°C
PULSE TEST
VGS
=
10, 15 V
1
0.1
0.1
1
10
DRAIN CURRENT I
D
(A)
0.1
0.1
1
10
DRAIN CURRENT I
D
(A)
3
2009-09-29
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