SD4010 View Datasheet(PDF) - STMicroelectronics
Part Name
Description
MFG CO.
SD4010 Datasheet PDF : 5 Pages
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SD4010
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symb o l
Test Conditions
BVEBO IE = 10mA
BVCES IC = 50mA
BVCEO IC = 50mA
ICEO VCE = 26.5V
hFE
VCE = 5V
Tested Per Side
IC = 0mA
VBE = 0V
IB = 0mA
IE = 0mA
IC = 3A
Val ue
Min . Typ. Max.
Unit
3.0 4.0 —
V
60.0 85.0 —
V
28.0 30.0 —
V
— — 5 mA
25 50 80 —
DYNAMIC
Symbol
Test Conditions
Value
Unit
Min. Typ. Max.
POUT f = 860MHz
VCE = 26.5V
PIN = 2.2W
20.0 28.0 — W
GP
f = 860MHz
VCE = 26.5V
POUT = 20W
9.5 10.5 — dB
IMD3 PSYNC = 20W
VCE = 26.5V
(note 1)
— −48 −46 dBc
IP3
VCB = 26.5V
POUT = 20W PEP (note 2)
— 55 — dBm
COB f = 860MHz
VCB = 26.5V
(note 3)
— 25 36 pF
Load* f = 860MHz
Mismatch
VCE = 26.5V
POUT = 20W
3:1 10:1 — VSWR
Note 1:
ICQ = IC = 2.7A (1.35A per Si de)
*VSWR tested for a minimum of 3:1 SWR at all phase angles.
Three Tone IMD Testing (CCIR)
f1 = 860.0MHz/ −8dB ref. to PSYNC - Visual
f2 = 863.5MHz/ −16dB ref. to PSYNC - Color Subcarrier
f3 = 864.5MHz/ −7dB ref. to PSYNC - Aural
Note 2: IP3 Calculated Based on Two-Tone
IMD Testing:
f1 = 900.0 MHz/ −6dB ref. to POU T
f2 = 900.1 MHz/ −6dB ref. to POU T
IMD3 (Typ) < −36dBc
Note 3: Tested Per Side
TYPICAL PERFORMANCE
POWER OUTPUT vs POWER INPUT
POWER OUTPUT & POWER GAIN vs
TOTAL COLLECTOR CURRENT
2/5
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