STT2PF60L View Datasheet(PDF) - STMicroelectronics

Part Name

Description

MFG CO.

STT2PF60L

P-CHANNEL 60V - 0.20 Ω - 2A SOT23-6L STripFET™ II POWER MOSFET

STMicroelectronics 

STT2PF60L

P-CHANNEL 60V - 0.20 Ω - 2A SOT23-6L

STripFET™ II POWER MOSFET

PRELIMINARY DATA

TYPE

VDSS

RDS(on)

ID

STT2PF60L

60 V

<0.25 Ω

2A

s TYPICAL RDS(on) = 0.20 Ω

s STANDARD OUTLINE FOR EASY

AUTOMATED SURFACE MOUNT ASSEMBLY

s LOW THRESHOLD DRIVE

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s DC MOTOR DRIVE

s DC-DC CONVERTERS

s BATTERY MANAGEMENT IN NOMADIC

EQUIPMENT

s POWER MANAGEMENT IN

PORTABLE/DESKTOP PCs

s CELLULAR

SOT23-6L

INTERNAL SCHEMATIC DIAGRAM

MARKING

s STP6

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

VGS

Gate- source Voltage

ID

Drain Current (continuous) at TC = 25°C

ID

Drain Current (continuous) at TC = 100°C

IDM(•)

Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25°C

(•) Pulse width limited by safe operating area.

May 2002

.

Value

Unit

60

V

60

V

± 15

V

2

A

1.3

A

8

A

1.6

W

Note: For the P-CHANNEL MOSFET actual polarity of voltages and

current has to be reversed

1/6

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