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STP6N80K5 Datasheet PDF - STMicroelectronics

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STP6N80K5 Datasheet PDF : STP6N80K5 pdf     
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Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.

• Industry’s lowest RDS(on)
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected

Applications
• Switching applications

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Part Name
Description
PDF
Manufacturer
N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh™ Power MOSFET
STMicroelectronics
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N-Channel QFET® MOSFET 400 V, 3.4 A, 1.6 Ω
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N-Channel QFET® MOSFET 400 V, 3.4 A, 1.6 Ω
Fairchild Semiconductor
N-Channel Power MOSFETs, 4.5 A, 450 V/500 V
New Jersey Semiconductor
N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω
Fairchild Semiconductor
N-Channel QFET® MOSFET 600 V, 1.9 A, 4.7 Ω
Kersemi Electronic Co., Ltd.
N-Channel Power MOSFETs, 3.5 A, 150-200 V
New Jersey Semiconductor

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