These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on resistance, which is unmatched among silicon based Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
■ Worldwide best RDS(on)*area amongst the silicon based devices
■ Higher VDSS rating, high dv/dt capability
■ Excellent switching performance
■ Easy to drive, 100% avalanche tested
■ Switching applications