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BF1105R Datasheet PDF - Philips Electronics

Part NameDescriptionManufacturer
BF1105R N-channel dual-gate MOS-FETs Philips
Philips Electronics Philips
Other PDF  no available.
BF1105R Datasheet PDF : BF1105R pdf   
BF1105 image

DESCRIPTION
Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1105, BF1105R and BF1105WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic packages respectively.

FEATURES
• Short channel transistor with high forward transfer admittance to input capacitance ratio
• Low noise gain controlled amplifier up to 1 GHz.
• Internal self-biasing circuit to ensure good cross-modulation performance during AGC and good DC stabilization.

APPLICATIONS
• VHF and UHF applications with 5 V supply voltage, such as television tuners and professional communications equipment.

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