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HYM321000GS-50 Datasheet PDF - Infineon Technologies

Part NameDescriptionManufacturer
HYM321000GS-50 1M × 32-Bit Dynamic RAM Module (2M × 16-Bit Dynamic RAM Module) Infineon
Infineon Technologies Infineon
Other PDF  no available.
HYM321000GS-50 Datasheet PDF : HYM321000GS-50 pdf   
HYM321000GS-50 image

The HYM 321000S/GS-50/-60 is a 4 MByte DRAM module organized as 1 048 576 words by 32- bit in a 72-pin single-in-line package comprising two HYB 5118160BSJ 1M × 16 DRAMs in 400 mil wide SOJ-packages mounted together with two 0.2 µF ceramic decoupling capacitors on a PC board.

Advanced Information
• 1 048 576 words by 32-bit organization (alternative 2 097 152 words by 16-bit)
• Fast access and cycle time
    50 ns access time
    90 ns cycle time (-50 version)
    60 ns access time
    110 ns cycle time (-60 version)
• Fast page mode capability with
    35 ns cycle time (-50 version)
    40 ns cycle time (-60 version)
• Single + 5 V (± 10 %) supply
• Low power dissipation
    max 2200 mW active (-50 version)
    max. 1980 mW active (-60 version)
    CMOS – 11 mW standby
    TTL – 22 mW standby
• CAS-before-RAS refresh, RAS-only-refresh, Hidden refresh
• 2 decoupling capacitors mounted on substrate
• All inputs, outputs and clock fully TTL compatible
• 72 pin Single in-Line Memory Module
• Utilizes two 1M × 16 -DRAMs in SOJ-42 packages
• 1024 refresh cycles/16 ms
• Optimized for use in byte-write non-parity applications
• Tin-Lead contact pads HYM 321000S
• Gold-Lead contact pads HYM 321000GS
• single sided module with 20.32 mm (800 mil) height

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Other manufacturer searches related to HYM321000GS-50

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