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Part Name(s) : VC5022 VC5022-2
ETC
Unspecified
Description : Super A. / VC5022-2 / SIP 9 Pin

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CEL
California Eastern Laboratories.
Description : NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-Pin Super MINIMOLD

DESCRIPTION
The NE68030 / 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.
It is suitable for a high density surface mount assembly since the transistor has been applied 3-Pin Super minimold package.

FEATURES
• Low noise : NF = 1.9 dB TYP. @ VCE = 3 V, IC = 5 mA, f = 2 GHz
• High gain : |S21e|2 = 7.5 dB TYP. @ VCE = 3 V, IC = 5 mA, f = 2 GHz
• 3-Pin Super minimold package

CEL
California Eastern Laboratories.
Description : NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-Pin Super MINIMOLD

DESCRIPTION
The NE68130 / 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-Pin Super minimold package.

FEATURES
• Low noise : NF = 1.4 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• High gain : |S21e|2 = 12 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• 3-Pin Super minimold package

NEC
NEC => Renesas Technology
Description : NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-Pin Super MINIMOLD

DESCRIPTION
The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-Pin Super minimold package.

FEATURES
• Low noise : NF = 1.4 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• High gain : |S21e|2 = 12 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• 3-Pin Super minimold package

 

Part Name(s) : CPC1218 CPC1218Y
Clare
Clare Inc => IXYS
Description : 4-Pin SIP OptoMOS® Relay

Description
The CPC1218 is a miniature voltage-controlled 1-Form-A Solid State Relay in a 4-Pin Single In-line Package (SIP) that employs optically coupled MOSFET technology to provide 2500Vrms of input to output isolation. The Super efficient MOSFET switches and photovoltaic die use Clare’s patented OptoMOS® architecture. The optically-coupled output is controlled by the input's highly efficient GaAlAs infrared LED and a built-in series resistor to provide input voltage-controlled operation.

Features
• 100% Solid State
• Voltage-controlled operation
• Matches popular reed relay Pin-out
• Designed for use in security systems complying with EN50130-4
• Small 4-Pin SIP Package
• TTL/CMOS Compatible input
• Arc-Free With No Snubbing Circuits
• 2500Vrms Input/Output Isolation
• No EMI/RFI Generation
• Immune to radiated EM fields
• Auto Pick & Place, Wave Solderable

Applications
• Security
   • Passive Infrared Detectors (PIR)
   • Data Signalling
   • Sensor Circuitry
• Instrumentation
   • Multiplexers
   • Data Acquisition
   • Electronic Switching
   • I/O Subsystems
   • Energy Meters
• Medical Equipment—Patient/Equipment Isolation
• Aerospace
• Industrial Controls

Part Name(s) : UPA802TC UPA802TC-T1
NEC
NEC => Renesas Technology
Description : NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS) IN A FLAT-LEAD 6-Pin THIN-TYPE ULTRA Super MINIMOLD

FEATURES
• Built-in low phase distortion, high-gain transistor
   NF = 1.4 dB TYP., |S21e|2 = 12.0 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 1 GHz
• Built-in 2 transistors (2 × 2SC5433)
• Flat-lead 6-Pin thin-type ultra Super minimold package

NEC
NEC => Renesas Technology
Description : NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-Pin THIN-TYPE ULTRA Super MINIMOLD PACKAGE

DESCRIPTION
The µPA831TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.

FEATURES
• Low noise
    Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP.
    @f = 1 GHz, VCE = 3 V, IC = 7 mA
• High gain
    Q1 : |S21e|2 = 9.0 dB TYP., Q2 : |S21e|2 = 12.0 dB TYP.
    @f = 1 GHz, VCE = 3 V, IC = 7 mA
• Flat-lead 6-Pin thin-type ultra Super minimold package
• 2 different built-in transistors (2SC5006, 2SC5007)

CEL
California Eastern Laboratories.
Description : NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-Pin Super MINIMOLD (18)

FEATURES
• High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
• Low noise and high gain
• Low voltage operation
• 4-Pin Super minimold (18) package

Part Name(s) : UPA843TC UPA843TC-T1
NEC
NEC => Renesas Technology
Description : NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A FLAT-LEAD 6-Pin THIN-TYPE ULTRA Super MINIMOLD

FEATURES
• Flat-lead 6-Pin thin-type ultra Super minimold package
• 2 different built-in transistors (2SC5603, 2SC5600)
• Low voltage operation
   Q1: Built-in high gain transistor
      fT = 13.5 GHz, |S21e|2 = 10.0 dB @ VCE = 1 V, IC = 5 mA, f = 2 GHz
   Q2: Built-in low phase distortion transistor suited for OSC operation
      fT = 5.0 GHz, |S21e|2 = 4.0 dB @ VCE = 1 V, IC = 5 mA, f = 2 GHz

CEL
California Eastern Laboratories.
Description : NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-Pin Super MINIMOLD

FEATURES
• High Gain Bandwidth Product (fT = 10 GHz TYP.)
• Low Noise, High Gain
• Low Voltage Operation
• 4-Pin Super minimold Package

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