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Motorola
Motorola => Freescale
Description : Silicon Hot-Carrier Diodes Schottky Barrier Diodes

Silicon Hot-Carrier Diodes Schottky Barrier Diodes

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.

• The Schottky Barrier Construction Provides Ultra–Stable Characteristics by Eliminating the “Cat–Whisker” or “S–Bend” Contact
• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.0 pF @ VR = 20 V
• High Reverse Voltage – to 70 Volts
• Low Reverse Leakage – 200 nA (Max)

Part Name(s) : BAT54H BAT54H
Secos
Secos Corporation.
Description : 0.2A, 30V Silicon Hot-Carrier Detector Surface Mount Schottky Barrier Diode

30 Volt Silicon Hot-Carrier Detector
Surface Mount Schottky Barrier Diode

FEATURES
● Low Turn-on Voltage
● Extremely Fast Switching Speed
● PN Junction Guard Ring for Transient and
   ESD Protection

Part Name(s) : MMDL301 MMDL301T1
ON-Semiconductor
ON Semiconductor
Description : Silicon Hot-Carrier Diodes

Silicon Hot-Carrier Diodes Schottky Barrier Diode

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are available in a Surface Mount package.

• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V
• Low Reverse Leakage – IR = 13 nAdc (Typ)
• Device Marking: 4T

Part Name(s) : MBD301 MMBD301LT1
Motorola
Motorola => Freescale
Description : Silicon Hot–Carrier Diodes Schottky Barrier Diodes

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.
   
• The Schottky Barrier Construction Provides Ultra–Stable Characteristics by Eliminating the “Cat–Whisker” or “S–Bend” Contact
• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V
• Low Reverse Leakage – IR = 13 nAdc (Typ) MBD301, MMBD301
   

Part Name(s) : MBD701 MMBD701LT1
LRC
Leshan Radio Company,Ltd
Description : Silicon Hot –Carrier Diodes

Silicon Hot –Carrier Diodes

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost,high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.

• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.0 pF @ V R = 20 V
• High Reverse Voltage – to 70 Volts
• Low Reverse Leakage – 200 nA (Max)

Part Name(s) : MMBD301L
ON-Semiconductor
ON Semiconductor
Description : Silicon Hot-Carrier Diodes Schottky Barrier Diodes

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.

• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V
• Low Reverse Leakage – IR = 13 nAdc (Typ) MBD301, MMBD301

Part Name(s) : MMBD701LT1 MMBD701LT3
ON-Semiconductor
ON Semiconductor
Description : Silicon Hot-Carrier Diodes Schottky Barrier Diodes

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.

• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.0 pF @ VR = 20 V
• High Reverse Voltage – to 70 Volts
• Low Reverse Leakage – 200 nA (Max)

Part Name(s) : MMBD301T1 MMBD301LT1
Leshan-Radio
Leshan Radio Company
Description : Silicon Hot–Carrier Diodes Schottky Barrier Diodes

These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital applications.They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements.They are also available in a Surface Mount package.

• EXtremely Low Minority Carrier Lifetime –15ps(Typ)
• very Low Capacitance –1.5pF(Max)@VR=15V
• CLow Reverse Leakage –IR=13 nAdc(Typ)MBD301,MMBD301

LRC
Leshan Radio Company,Ltd
Description : Silicon Hot–Carrier Diodes Schottky Barrier Diodes

These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital applications.They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements.They are also available in a Surface Mount package.
   
• EXtremely Low Minority Carrier Lifetime –15ps(Typ)
• very Low Capacitance –1.5pF(Max)@VR=15V
• CLow Reverse Leakage –IR=13 nAdc(Typ)MBD301,MMBD301
   

Description : Silicon Hot−Carrier Diodes Schottky Barrier Diodes

These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and  industrial/commercial requirements. They are also available in a Surface Mount package.

Features
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
• Very Low Capacitance − 1.5 pF (Max) @ VR= 15 V
• Low Reverse Leakage − IR= 13 nAdc (Typ) MBD301, MMBD301
• Pb−Free Packages are Available

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