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Part Name(s) : BAT54H BAT54H Secos
Secos Corporation.
Description : 0.2A, 30V SILICON HOT-CARRIER Detector Surface Mount SCHOTTKY BARRIER Diode View

30 Volt SILICON HOT-CARRIER Detector
Surface Mount SCHOTTKY BARRIER Diode

FEATURES
● Low Turn-on Voltage
● Extremely Fast Switching Speed
● PN Junction Guard Ring for Transient and
   ESD Protection

Part Name(s) : MMDL301 MMDL301T1 ON-Semiconductor
ON Semiconductor
Description : SILICON HOT-CARRIER DIODES View

SILICON HOT-CARRIER DIODES SCHOTTKY BARRIER Diode

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are available in a Surface Mount package.

• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V
• Low Reverse Leakage – IR = 13 nAdc (Typ)
• Device Marking: 4T

Part Name(s) : MBD301 MMBD301LT1 Motorola
Motorola => Freescale
Description : SILICON Hot?Carrier DIODES SCHOTTKY BARRIER DIODES View

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.
   
• The SCHOTTKY BARRIER Construction Provides Ultra–Stable Characteristics by Eliminating the “Cat–Whisker” or “S–Bend” Contact
• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V
• Low Reverse Leakage – IR = 13 nAdc (Typ) MBD301, MMBD301
   

Part Name(s) : MMBD301L ON-Semiconductor
ON Semiconductor
Description : SILICON HOT-CARRIER DIODES SCHOTTKY BARRIER DIODES View

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.

• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.5 pF (Max) @ VR = 15 V
• Low Reverse Leakage – IR = 13 nAdc (Typ) MBD301, MMBD301


Part Name(s) : MMBD301T1 MMBD301LT1 Leshan-Radio
Leshan Radio Company
Description : SILICON Hot?Carrier DIODES SCHOTTKY BARRIER DIODES View

These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital applications.They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements.They are also available in a Surface Mount package.

• EXtremely Low Minority Carrier Lifetime –15ps(Typ)
• very Low Capacitance –1.5pF(Max)@VR=15V
• CLow Reverse Leakage –IR=13 nAdc(Typ)MBD301,MMBD301

Part Name(s) : MBD301 MMBD301LT1 MMBD301L LRC
Leshan Radio Company,Ltd
Description : SILICON Hot?Carrier DIODES SCHOTTKY BARRIER DIODES View

These devices are designed primarily for high–efficiency UHF and VHF detector applications.They are readily adaptable to many other fast switching RF and digital applications.They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements.They are also available in a Surface Mount package.
   
• EXtremely Low Minority Carrier Lifetime –15ps(Typ)
• very Low Capacitance –1.5pF(Max)@VR=15V
• CLow Reverse Leakage –IR=13 nAdc(Typ)MBD301,MMBD301
   

Part Name(s) : MBD301 MBD301G MMBD301LT1 MMBD301LT1G MMBD301LT3 MMBD301LT3G ON-Semiconductor
ON Semiconductor
Description : SILICON Hot?Carrier DIODES SCHOTTKY BARRIER DIODES View

These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and  industrial/commercial requirements. They are also available in a Surface Mount package.

Features
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
• Very Low Capacitance − 1.5 pF (Max) @ VR= 15 V
• Low Reverse Leakage − IR= 13 nAdc (Typ) MBD301, MMBD301
• Pb−Free Packages are Available

Part Name(s) : MBD301G MMBD301LT1G MMBD301LT3G SMMBD301LT3G ONSEMI
ON Semiconductor
Description : SILICON HOT-CARRIER DIODES SCHOTTKY BARRIER DIODES View

These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low−cost, high−volume consumer and industrial/commercial requirements. They are also available in a Surface Mount package.
   
Features
• Extremely Low Minority Carrier Lifetime − 15 ps (Typ)
• Very Low Capacitance − 1.5 pF (Max) @ VR = 15 V
• Low Reverse Leakage − IR = 13 nAdc (Typ) MBD301, MMBD301
• S Prefix for Automotive and Other Applications Requiring Unique
    Site and Control Change Requirements; AEC−Q101 Qualified and
    PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
    Compliant
   

Part Name(s) : MMDL301T1 Leshan-Radio
Leshan Radio Company
Description : SILICON Hot?Carrier DIODES SCHOTTKY BARRIER Diode View

These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to many other fast switching RF and digital applications. They are supplied in an inexpensive plastic package for low–cost, high–volume consumer and industrial/commercial requirements. They are available in a Surface Mount package.

• Extremely Low Minority Carrier Lifetime – 15 ps (Typ)
• Very Low Capacitance – 1.5 pF (Max) @ V R = 15 V
• Low Reverse Leakage – I R = 13 nAdc (Typ)
• Device Marking: 4T

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