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High Voltage Power DIODES STANDARD and Ultra-Fast RECOVERY

STANDARD RECOVERY DIODES, 130A

Features
• Diffused Series
• Industrial grade
• Available in Normal and Reverse polarity
• Metric and UNF thread type

FAST RECOVERY RECTIFIER DIODES

■ SOFT RECOVERY
■ VERY HIGH VOLTAGE
■ SMALL RECOVERY CHARGE

APPLICATIONS
■ ANTISATURATION DIODES FOR TRANSISTOR BASE DRIVE
■ SNUBBER DIODES

FAST RECOVERY RECTIFIER DIODES

■ SOFT RECOVERY
■ VERY HIGH VOLTAGE
■ SMALL RECOVERY CHARGE

APPLICATIONS
■ ANTISATURATION DIODES FOR TRANSISTOR BASE DRIVE
■ SNUBBER DIODES

FAST RECOVERY RECTIFIER DIODES

■ VERY FAST FORWARD AND REVERSE RECOVERY DIODES

SUITABLE APPLICATION
■ SWTCHING POWER TRANSISTORS DRIVER CIRCUITS (SERIES DIODES IN ANTISATURATION CLAMP SPEED UP DIODE IN DISCRETE DARLINGTON...)
■ THYRISTORS GATE DRIVER CIRCUITS
■ HIGH FREQUENCY RECTIFICATION

Features
• Extremely low voltage drop 1.1V(typ) @ 2A
• S-Series: Minimizes power dissipation at up to 3
    KHz PWM frequency in inverter drives, up to 4
    KHz in brushless DC drives.
• Tight parameter distribution
• IGBT co-packaged with HEXFREDTM ultrafast,
    ultra-soft-RECOVERY anti-parallel DIODES for use
    in bridge configurations
• Industry STANDARD TO-252AA package
   
Benefits
• Generation 4 IGBTs offer highest efficiencies
    available
• IGBTs optimized for specific application conditions
• HEXFRED DIODES optimized for performance with
    IGBTs . Minimized RECOVERY characteristics require
    less/no snubbing
• Lower losses than MOSFETs conduction and
    Diode losses
   

Features
• Extremely low voltage drop 1.1V(typ) @ 2A
• S-Series: Minimizes power dissipation at up to 3
    KHz PWM frequency in inverter drives, up to 4
    KHz in brushless DC drives.
• Tight parameter distribution
• IGBT co-packaged with HEXFREDTM ultrafast,
    ultra-soft-RECOVERY anti-parallel DIODES for use
    in bridge configurations
• Industry STANDARD TO-252AA package
• Lead-Free
   
Benefits
• Generation 4 IGBTs offer highest efficiencies
    available
• IGBTs optimized for specific application conditions
• HEXFRED DIODES optimized for performance with
    IGBTs . Minimized RECOVERY characteristics require
    less/no snubbing
• Lower losses than MOSFETs conduction and
    Diode losses
   

STANDARD RECOVERY DIODES (Stud Version), 25 A

FEATURES
• High surge current capability
• Stud cathode and stud anode version
• Wide current range
• Types up to 1200 V VRRM
• RoHS compliant

TYPICAL APPLICATIONS
• Battery charges
• Converters
• Power supplies
• Machine tool controls

Description
This new IRK series of MAGN-A-paks uses high voltage power DIODES in two basic configurations. The semiconductors are electrically isolated from the metal base , allowing common heatsinks and compact assemblies to be built. They can be interconnected to form single phase or three phase bridges and the single diode module can be used in conjunction with the thyristor modules as a freewheel diode. These modules are intended for general purpose applications such as battery chargers, welders and plating equipment and where high voltage and high current are required (motor drives, etc.).

Features
■ High voltage
■ Electrically isolated base plate
■ 3000 VRMS isolating voltage
■ Industrial STANDARD package
■ Simplified mechanical designs, rapid assembly
■ High surge capability
■ Large creepage distances
■ UL E78996 approved

Surface Mount STANDARD RECOVERY Power Rectifier
SMB Power Surface Mount Package

Features mesa epitaxial construction with glass passivation. Ideally suited for high frequency switching power supplies; free wheeling DIODES and polarity protection DIODES.

Features
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Stable, High Temperature, Glass Passivated Junction
• AEC−Q101 Qualified and PPAP Capable
• NRVS Prefix for Automotive and Other Applications Requiring
   Unique Site and Control Change Requirements
• All Packages are Pb-Free*