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Part Name(s) : IRF634 IR
International Rectifier
Description : HEXFET POWER MOSFET

Description
Third International RECTIFIER from International RECTIFIER provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements

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Part Name(s) : 40EPS 40EPS08 40EPS12 IR
International Rectifier
Description : INPUT RECTIFIER DIODE

Description/Features
The 40EPS.. RECTIFIER SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction temperature.
Typical applications are in input rectification and these products are designed to be used with International RECTIFIER Switches and Output RECTIFIERs which are available in identical package outlines.

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Part Name(s) : 40EPS16PBF IR
International Rectifier
Description : INPUT RECTIFIER DIODE Lead-Free

Description/ Features
The 40EPS16PbF RECTIFIER SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction temperature.
Typical applications are in input rectification and these products are designed to be used with International RECTIFIER Switches and Output RECTIFIERs which are available in identical package outlines.

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Part Name(s) : 20ETS16 20ETS16S 20ETS16TRL 20ETS16TRR 20ETS16STRL 20ETS16STRR IR
International Rectifier
Description : INPUT RECTIFIER DIODE

Description/Features
The 20ETS.. RECTIFIER SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150°C junction temperature.
Typical applications are in input rectification and these products are designed to be used with International RECTIFIER Switches and Output RECTIFIERs which are available in identical package outlines.

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Part Name(s) : 40EPS16 IR
International Rectifier
Description : INPUT RECTIFIER DIODE

Description/Features
The 40EPS16 RECTIFIER SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction temperature.
Typical applications are in input rectification and these products are designed to be used with International RECTIFIER Switches and Output RECTIFIERs which are available in identical package outlines.

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Part Name(s) : 40EPS08PBF 40ETF12PBF IR
International Rectifier
Description : INPUT RECTIFIER DIODE

Description/ Features
The 40EPS..PbF RECTIFIER SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150° C junction temperature. Typical applications are in input rectification and these products are designed to be used with International RECTIFIER Switches and Output RECTIFIERs which are available in identical package outlines.

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Part Name(s) : 20ETS12PBF IR
International Rectifier
Description : INPUT RECTIFIER DIODE Lead-Free ("PbF" suffix)

Description/ Features
The 20ETS12PbF RECTIFIER SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable operation up to 150°C junction temperature.

Typical applications are in input rectification and these products are designed to be used with International RECTIFIER Switches and Output RECTIFIERs which are available in identical package outlines.

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Part Name(s) : IRF7704 IR
International Rectifier
Description : HEXFET® POWER MOSFET

Description
HEXFET® POWER MOSFETs from International RECTIFIER utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International RECTIFIER is well known for,provides thedesigner with an extremely efficient and reliable device for battery and load management.

● Ultra Low On-Resistance
● P-Channel MOSFET
● Very Small SOIC Package
● Low Profile (< 1.1mm)
● Available in Tape & Reel

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Part Name(s) : IRF7752 IR
International Rectifier
Description : HEXFET® POWER MOSFET

Description
HEXFET® POWER MOSFETs from International RECTIFIER utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that International RECTIFIER is well known for, provides thedesigner with an extremely efficient and reliable device for use in battery and load management.

● Ultra Low On-Resistance
● Dual N-Channel MOSFET
● Very Small SOIC Package
● Low Profile (< 1.1mm)
● Available in Tape & Reel

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Part Name(s) : MBRB1545CT Motorola
Motorola => Freescale
Description : SWITCHMODE™ POWER RECTIFIER

SWITCHMODE™ POWER RECTIFIER
D2PAK Surface Mount POWER Package

The D2PAK POWER RECTIFIER employs the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:

• Center-Tap Configuration
• Guardring for Stress Protection
• Low Forward Voltage
• 150°C Operating Junction Temperature
• Epoxy Meets UL94, VO at 1/8″
• Guaranteed Reverse Avalanche
• Short Heat Sink Tab Manufactured — Not Sheared!
• Similar in Size to the Industry Standard TO-220 Package

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