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Part Name(s) : IRF830S
IR
International Rectifier
Description : description

description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

• Surface Mount
available.in Tape & Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements

Part Name(s) : 2SA1694 A1694
Iscsemi
Inchange Semiconductor
Description : description

description
·High Collector-Emitter Breakdown Voltage V(BR)CEO= -120V(Min)
·Good Linearity of hFE
·Complement to Type 2SC4467

APPLICATIONS
·Designed for audio and general purpose applications

Part Name(s) : INN180 TDA955
ETC
Unspecified
Description : EXAMINATION in Hradware description and Verification

EXAMINATION in Hradware description and Verification

Part Name(s) : AON7538 AON7538L
ETC
Unspecified
Description : DFN3X3 PACKAGE MARKING description

[Alpha & Omega Semiconductor, Ltd.]

DFN3X3 PACKAGE MARKING description

Part Name(s) : 2N5160
AMERICASEMI
America Semiconductor, LLC
Description : No description available

PNP SILICON AMPLIFIER TRANSISTORS
​​​​​​​IC = -400 mA POWER TRANSISTOR PNP SILICON

... designed for amplifier, frequency multiplier or oscillator applications in military and industrial equipment. Suitable for use as Class A, B, or C output driver, or pre-driver stages in VHF and UHF.

Part Name(s) : AO3410 AO3410L
AOSMD
Alpha and Omega Semiconductor
Description : PACKAGE MARKING description

PACKAGE MARKING description

Part Name(s) : AON7414 AON7414L
ETC
Unspecified
Description : DFN 3X3 PACKAGE MARKING description

[Alpha & Omega Semiconductor, Ltd.]

DFN 3X3 PACKAGE MARKING description

Part Name(s) : M14C16DD M14C16_DD
ST-Microelectronics
STMicroelectronics
Description : M14C16 Die description

Pad locations are measured relative to the die centre (where X and Y are respectively the horizontal and vertical axis, measured in µm).

PRODUCT M14C16
■ WAFER SIZE 152 mm (6 inches)
■ DIE IDENTIFICATION M14C16KA_R
■ DIE SIZE (X x Y) 1390 x 2375 µm
■ SCRIBE LINE 101.8 x 102.4 µm
■ PAD OPENING 100 x 100 µm

DIE LAYOUT
■ DI Die Identification (at the position shown in Figure 1)
■ C1, C2, C3, C5, C7 Pad contacts to the ISO pins (at the positions shown in Figure 1)
■ C4, C6, C8 These ISO pins do not appear on the M14C16 die
■ NC This pad, shown in Figure 1, is Not Connected

Part Name(s) : M14C32DD M14C32_DD
ST-Microelectronics
STMicroelectronics
Description : M14C32 Die description

PRODUCT                        M14C32
■ WAFER SIZE                152 mm (6 inches)
■ DIE IDENTIFICATION   M14C32KA_R
■ DIE SIZE (X x Y)            2040 x 2355 µm
■ SCRIBE LINE                100.5 x 101.7 µm
■ PAD OPENING              100 x 100 µm

Part Name(s) : AO4578L AO4578
AOSMD
Alpha and Omega Semiconductor
Description : SO8 PACKAGE MARKING description

SO8 PACKAGE MARKING description

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