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Part Name(s) : BFP650E6327
Infineon Technologies
Infineon Technologies
Description : NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor

Preliminary data
• For high power amplifiers
• Ideal for low phase noise oscilators
• Maxim. available Gain Gma = 21 dB at 1.8 GHz
   Noise figure F = 0.9 dB at 1.8 GHz
• Gold metallization for high reliability
• 70 GHz fT- Silicon Germanium technology.

Infineon Technologies
Infineon Technologies
Description : High Linearity Silicon Germanium Bipolar RF Transistor

NPN Silicon Germanium RF Transistor

Preliminary data
• For high power amplifiers
• Ideal for low phase noise oscilators
• Maxim. available Gain Gma = 21 dB at 1.8 GHz
   Noise figure F = 0.9 dB at 1.8 GHz
• Gold metallization for high reliability
• 70 GHz fT- Silicon Germanium technology.

Part Name(s) : BFP740 BFP740 BFP740
Infineon Technologies
Infineon Technologies
Description : Low Noise Silicon Germanium Bipolar RF Transistor

NPN Silicon Germanium RF Transistor*

• High gain ultra low noise RF Transistor
• Provides outstanding performance for a wide range
   of wireless applications up to 10 GHz
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
   Outstanding noise figure F = 0.85 dB at 6 GHz
• High maximum stable gain
   Gms = 27.5 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 150 GHz fT-Silicon Germanium technology
*Short-term description

Infineon Technologies
Infineon Technologies
Description : NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor

• High gain low noise RF Transistor
• Provides outstanding performance
   for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.65 dB at 1.8 GHz
   Outstanding noise figure F = 1.3 dB at 6 GHz
• High maximum stable gain
   Gms = 24 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 70 GHz fT-Silicon Germanium technology

Infineon Technologies
Infineon Technologies
Description : Low Noise Silicon Germanium Bipolar RF Transistor

NPN Silicon Germanium RF Transistor*

• High gain low noise RF Transistor
• Provides outstanding performance
   for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.65 dB at 1.8 GHz
   Outstanding noise figure F = 1.2 dB at 6 GHz
• High maximum stable gain
   Gms = 23 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 70 GHz fT-Silicon Germanium technology
*Short-term description

Infineon Technologies
Infineon Technologies
Description : NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor

• High gain ultra low noise RF Transistor
• Provides outstanding performance for
   a wide range of wireless applications
   up to 10 GHz and more
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
   Outstanding noise figure F = 0.75 dB at 6 GHz
• High maximum stable gain
   Gms = 27.5 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 150 GHz fT-Silicon Germanium technology

Part Name(s) : BFR740L3
Infineon Technologies
Infineon Technologies
Description : NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor

• High gain ultra low noise RF Transistor
• Provides outstanding performance for
   a wide range of wireless applications
   up to 10 GHz and more
• Ideal for CDMA and WLAN applications
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
   Outstanding noise figure F = 0.8 dB at 6 GHz
• High maximum stable gain
   Gms = 24 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 150 GHz fT-Silicon Germanium technology

Part Name(s) : BFY640 BFY640B
Infineon Technologies
Infineon Technologies
Description : HiRel NPN Silicon Germanium RF Transistor

HiRel NPN Silicon Germanium RF Transistor

● HiRel Discrete and Microwave Semiconductor
● High gain low noise RF Transistor
● High maximum stable gain: Gms 24dB at 1.8 GHz
● Noise figure F = 0.8 dB at 1.8 GHz
   Noise figure F = 1.1 dB at 6 GHz
● Hermetically sealed microwave package

Part Name(s) : BFU760F
NXP Semiconductors.
NXP Semiconductors.
Description : NPN wideband Silicon Germanium RF Transistor

General description
NPN Silicon Germanium microwave Transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Features and benefits
■ Low noise high linearity RF Transistor
■ High maximum output third-order intercept point 32 dBm at 1.8 GHz
■ 110 GHz fT Silicon Germanium technology

Applications
■ Ka band oscillators DRO’s
■ High linearity applications
■ Medium output power applications
■ Wi-Fi / WLAN / WiMAX
■ GPS
■ ZigBee
■ SDARS first stage LNA
■ LTE, cellular, UMTS

Part Name(s) : BFP650F BFP650F
Infineon Technologies
Infineon Technologies
Description : NPN Silicon Germanium RF Transistor*

NPN Silicon Germanium RF Transistor*
​​​​​​​
• For medium power amplifiers and driver stages
• High OIP3 and P-1dB
• Ideal for low phase noise oscilators
• Maxim. available Gain Gma = 21.5 dB at 1.8 GHz
   Noise figure F = 0.8 dB at 1.8 GHz
• 70 GHz fT- Silicon Germanium technology
• Pb-free (RoHS compliant) package1)
• Qualified according AEC Q101
* Short term description

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