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NPN General Purpose Amplifier

This device is designed for low noise, high gain, General Purpose applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.

NPN General Purpose Amplifier

This device is designed for low noise, high gain, General Purpose Amplifier applications at collector currents from 1.0 µA to 50 mA. Sourced from Process 07.

This device is designed as a General Purpose Amplifier and switch, The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an Amplifier.

NPN General Purpose Amplifier

FEATURES
● For General AF application.
● Complementary PNP type available BC808.
● High collector current, high current gain.
● Low collector-emitter saturation voltage.

APPLICATIONS
● General Purpose medium power Amplifier.

Features
   This device is designed as a General Purpose Amplifier and switch.
   The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an Amplifier. Sourced from Process 23.

This device is designed for General Purpose high voltage Amplifiers and gas discharge display driving. Sourced from Process 16.

NPN General Purpose Amplifier

This device is designed for General Purpose medium power
Amplifiers and switches requiring collector currents to 1.2 A.
Sourced from Process 38.

Features
• Capable of 500mWatts of Power Dissipation and 200mA Ic.
• Operating and Storage Junction Temperatures: -55ć to 150ć
• Compliment to PXT3906
• Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)
• Epoxy meets UL 94 V-0 flammability rating
• Moisure Sensitivity Level 1
• Marking: 1A

General Purpose Transistor
   
• Collector-Emitter Voltage: VCEO= 40V
• Collector Power Dissipation: PC (max)=625mW
• Refer KSP2222 for graphs