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Part Name(s) : STD5N95K5 STF5N95K5 STP5N95K5 STU5N95K5 5N95K5 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 950 V, 2 Ω TYP., 3.5 A MDMESHK5 POWER MOSFETS IN DPAK, TO-220FP, TO-220 and IPAK

Description
These very high voltage N-CHANNEL POWER MOSFETS are designed usINg MDMESHK5 technology based on an INnovative proprietary vertical structure. The result is a dramatic reduction IN on-resistance and ultra-low gate charge for applications requirINg superior POWER density and high efficiency.

Features
INdustry’s lowest RDS(on) x area
INdustry’s best FoM (figure of merit)
• Ultra-low gate charge
• 100% avalanche tested
• Zener-protected

Applications
• SwitchINg applications

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Part Name(s) : STB13N80K5 STF13N80K5 STP13N80K5 STW13N80K5 13N80K5 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 800 V, 0.37 Ω TYP., 12 A MDMESHK5 POWER MOSFETS IN D²PAK, TO-220FP, TO-220 and TO-247

Description
These very high voltage N-CHANNEL POWER MOSFETS are designed usINg MDMESHK5 technology based on an INnovative proprietary vertical structure. The result is a dramatic reduction IN on-resistance and ultra-low gate charge for applications requirINg superior POWER density and high efficiency.

Features
INdustry’s lowest RDS(on) x area
INdustry’s best FoM (figure of merit)
● Ultra-low gate charge
● 100% avalanche tested
● Zener-protected

Applications
● SwitchINg applications

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Part Name(s) : 6N80K5 STB6N80K5 STD6N80K5 STI6N80K5 STP6N80K5 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 800 V, 1.3 Ω TYP., 4.5 A MDMESHK5 POWER MOSFETS IN D²PAK, DPAK, I²PAK and TO-220 packages

Description
These very high voltage N-CHANNEL POWER MOSFETS are designed usINg MDMESHK5 technology based on an INnovative proprietary vertical structure. The result is a dramatic reduction IN on-resistance and ultra-low gate charge for applications requirINg superior POWER density and high efficiency.

INdustry’s lowest RDS(on)
INdustry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected

Applications
• SwitchINg applications

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Part Name(s) : STF9N60M2 STFI9N60M2 9N60M2 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600 V, 0.72 Ω TYP., 5.5 A MDMESH II Plus™ low Qg POWER MOSFETS IN TO-220FP and I2PAKFP packages

Description
These devices are N-CHANNEL POWER MOSFETS developed usINg a new generation of MDMESH™ technology: MDMESH II Plus™ low Qg. These revolutionary POWER MOSFETS associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demandINg high efficiency converters.

Features
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate INput resistance
• 100% avalanche tested
• Zener-protected

Applications
• SwitchINg applications

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Part Name(s) : STP13N60M2 STU13N60M2 STW13N60M2 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600 V, 0.35 Ω TYP., 11 A MDMESH II Plus™ low Qg POWER MOSFETS IN TO-220, IPAK and TO-247 packages

Description
These devices are N-CHANNEL POWER MOSFETS developed usINg a new generation of MDMESH™ technology: MDMESH II Plus™ low Qg. These revolutionary POWER MOSFETS associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demandINg high efficiency converters.

Features
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate INput resistance
• 100% avalanche tested
• Zener-protected

Applications
• SwitchINg applications

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Part Name(s) : 11N65M5 STB11N65M5 STD11N65M5 STF11N65M5 STP11N65M5 STU11N65M5 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 650 V, 0.43 Ω TYP., 9 A MDMESH™ V POWER MOSFET IN D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description
These devices are N-CHANNEL MDMESH™ V POWER MOSFETS based on an INnovative proprietary vertical process technology, which is combINed with STMicroelectronics’ well-known POWERMESH™ horizontal layout structure. The resultINg product has extremely low on resistance, which is unmatched among silicon based POWER MOSFETS, makINg it especially suitable for applications which require superior POWER density and outstandINg efficiency.

Features
■ Worldwide best RDS(on) * area
■ Higher VDSS ratINg and high dv/dt capability
■ Excellent switchINg performance
■ 100% avalanche tested

Applications
■ SwitchINg applications

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Part Name(s) : STD9N60M2 STP9N60M2 STU9N60M2 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600 V, 0.72 Ω TYP., 5.5 A MDMESH II Plus™ low Qg POWER MOSFET IN DPAK, TO-220 and IPAK packages

Description
These devices are N-CHANNEL POWER MOSFETS developed usINg a new generation of MDMESH™ technology: MDMESH II Plus™ low Qg. These revolutionary POWER MOSFETS associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demandINg high efficiency converters.

Features
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate INput resistance
• 100% avalanche tested
• Zener-protected

Applications
• SwitchINg applications

View
Part Name(s) : STF24N60M2 STFI24N60M2 24N60M2 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600 V, 0.168 Ω TYP., 18 A MDMESH II Plus™ low Qg POWER MOSFET IN TO-220FP and I2PAKFP packages

Description
These devices are N-CHANNEL POWER MOSFETS developed usINg a new generation of MDMESH™ technology: MDMESH II Plus™ low Qg. These revolutionary POWER MOSFETS associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demandINg high efficiency converters.

Features
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate INput resistance
• 100% avalanche tested
• Zener-protected

Applications
• SwitchINg applications
• LLC converters, resonant converters

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Part Name(s) : 6N60M2 STB6N60M2 STD6N60M2 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600 V, 1.06 Ω TYP., 4.5 A MDMESH II Plus™ low Qg POWER MOSFET IN D2PAK and DPAK packages

Description
These devices are N-CHANNEL POWER MOSFETS developed usINg a new generation of MDMESH™ technology: MDMESH II Plus™ low Qg. These revolutionary POWER MOSFETS associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demandINg high efficiency converters.

Features
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate INput resistance
• 100% avalanche tested
• Zener-protected

Applications
• SwitchINg applications

View
Part Name(s) : 18N55M5 STB18N55M5 STD18N55M5 STF18N55M5 STP18N55M5 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 550 V, 0.18 Ω, 13 A, MDMESH™ V POWER MOSFET IN D²PAK, DPAK, TO-220FP and TO-220

Description
The devices are N-CHANNEL MDMESH™ V POWER MOSFET based on an INnovative proprietary vertical process technology, which is combINed with STMicroelectronics’ well-known POWERMESH™ horizontal layout structure. The resultINg product has extremely low on resistance, which is unmatched among silicon based POWER MOSFETS, makINg it especially suitable for applications which require superior POWER density and outstandINg efficiency.

Features
DPAK worldwide best RDS(on)
■ Higher VDSS ratINg
■ High dv/dt capability
■ Excellent switchINg performance
■ Easy to drive
■ 100% avalanche tested

Application
  SwitchINg applications

 

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