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Part Name(s) : 11N65M5 STB11N65M5 STD11N65M5 STF11N65M5 STP11N65M5 STU11N65M5 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 650 V, 0.43 Ω TYP., 9 A MDMESH™ V POWER MOSFET IN D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages

Description
These devices are N-CHANNEL MDMESH™ V POWER MOSFETs based on an INnovative proprietary vertical process technology, which is combINed with STMicroelectronics’ well-known POWERMESH™ horizontal layout structure. The resultINg product has extremely low on resistance, which is unmatched among silicon based POWER MOSFETs, makINg it especially suitable for applications which require superior POWER density and outstandINg efficiency.

Features
■ Worldwide best RDS(on) * area
■ Higher VDSS ratINg and high dv/dt capability
■ Excellent switchINg performance
■ 100% avalanche tested

Applications
■ SwitchINg applications

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Part Name(s) : 57N65M5_12 STB57N65M5 STF57N65M5 STI57N65M5 STP57N65M5 STW57N65M5_12 SWITCHING ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 650 V, 0.056 Ω TYP., 42 A MDMESH™ V POWER MOSFET IN I²PAK, TO-220, TO-220FP and D²PAK packages

Description
These devices are N-CHANNEL MDMESH™ V POWER MOSFETs based on an INnovative proprietary vertical process technology, which is combINed with STMicroelectronics’ well-known POWERMESH™ horizontal layout structure. The resultINg product has extremely low on resistance, which is unmatched among silicon based POWER MOSFETs, makINg it especially suitable for applications which require superior POWER density and outstandINg efficiency.

Features

■ Worldwide best RDS(on)*area amongst the silicon based devices
■ Higher VDSS ratINg, high dv/dt capability
■ Excellent switchINg performance
■ Easy to drive, 100% avalanche tested

Applications
■ SwitchINg applications

View
Part Name(s) : STW57N65M5-4 57N65M5 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 650 V, 0.056 Ω TYP., 42 A, MDMESH™ V POWER MOSFET IN a TO247-4 package

Description
This device is an N-CHANNEL MDMESH™ V POWER MOSFET based on an INnovative proprietary vertical process technology, which is combINed with STMicroelectronics’ well-known POWERMESH™ horizontal layout structure. The resultINg product has extremely low on resistance, which is unmatched among silicon-based POWER MOSFETs, makINg it especially suitable for applications which require superior POWER density and outstandINg efficiency.

Features

• Higher VDS ratINg
• Higher dv/dt capability
• Excellent switchINg performance thanks to the extra drivINg source pIN
• Easy to drive
• 100% avalanche tested

Applications
• High efficiency switchINg applications:
   – Servers
   – PV INverters
   – Telecom INfrastructure
   – Multi kW battery chargers

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Part Name(s) : STD9N60M2 STP9N60M2 STU9N60M2 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600 V, 0.72 Ω TYP., 5.5 A MDMESH II Plus™ low Qg POWER MOSFET IN DPAK, TO-220 and IPAK packages

Description
These devices are N-CHANNEL POWER MOSFETs developed usINg a new generation of MDMESH™ technology: MDMESH II Plus™ low Qg. These revolutionary POWER MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demandINg high efficiency converters.

Features
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate INput resistance
• 100% avalanche tested
• Zener-protected

Applications
• SwitchINg applications

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Part Name(s) : STF13NM60N STI13NM60N STP13NM60N STU13NM60N STW13NM60N ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600 V, 0.28 Ω TYP., 11 A MDMESH™ II POWER MOSFET IN TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages

Description
These devices are N-CHANNEL POWER MOSFETs developed usINg the second generation of MDMESH™ technology. This revolutionary POWER MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demandINg high efficiency converters.

■ 100% avalanche tested
■ Low INput capacitance and gate charge
■ Low gate INput resistance

Applications
■ SwitchINg applications

View
Part Name(s) : 12N65M5 STD12N65M5 STF12N65M5 STI12N65M5 STP12N65M5 STU12N65M5 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 650 V, 0.39 Ω, 8.5 A MDMESH™ V POWER MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK

Description
These devices are N-CHANNEL MDMESH™ V POWER MOSFETs based on an INnovative proprietary vertical process technology, which is combINed with STMicroelectronics’ well-known POWERMESH™ horizontal layout structure. The resultINg product has extremely low on resistance, which is unmatched among silicon based POWER MOSFETs, makINg it especially suitable for applications which require superior POWER density and outstandINg efficiency.

Features
■ Worldwide best RDS(on) * area
■ Higher VDSS ratINg and high dv/dt capability
■ Excellent switchINg performance
■ Easy to drive
■ 100% avalanche tested

Applications
   SwitchINg applications

View
Part Name(s) : STP13N60M2 STU13N60M2 STW13N60M2 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 600 V, 0.35 Ω TYP., 11 A MDMESH II Plus™ low Qg POWER MOSFETs IN TO-220, IPAK and TO-247 packages

Description
These devices are N-CHANNEL POWER MOSFETs developed usINg a new generation of MDMESH™ technology: MDMESH II Plus™ low Qg. These revolutionary POWER MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demandINg high efficiency converters.

Features
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate INput resistance
• 100% avalanche tested
• Zener-protected

Applications
• SwitchINg applications

View
Part Name(s) : STB31N65M5 STF31N65M5 STFI31N65M5 STP31N65M5 STW31N65M5 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 650 V, 0.124 Ω TYP., 22 A MDMESH™ V POWER MOSFET IN D2PAK, TO-220FP, I2PakFP, TO-220 and TO-247 packages

Description
These devices are N-CHANNEL MDMESH™ V POWER MOSFETs based on an INnovative proprietary vertical process technology, which is combINed with STMicroelectronics’ well-known POWERMESH™ horizontal layout structure. The resultINg product has extremely low onresistance, which is unmatched among siliconbased POWER MOSFETs, makINg it especially suitable for applications which require superior POWER density and outstandINg efficiency.

Features
• Worldwide best RDS(on) * area
• Higher VDSS ratINg and high dv/dt capability
• Excellent switchINg performance
• 100% avalanche tested

Applications
• SwitchINg applications

View
Part Name(s) : STW57N65M5 STWA57N65M5 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 650 V, 0.056 Ω TYP., 42 A MDMESH™ V POWER MOSFETs IN TO-247 and TO-247 long leads packages

Description
These devices are N-CHANNEL MDMESH™ V POWER MOSFETs based on an INnovative proprietary vertical process technology, which is combINed with STMicroelectronics’ well-known POWERMESH™ horizontal layout structure. The resultINg product has extremely low on resistance, which is unmatched among silicon-based POWER MOSFETs, makINg it especially suitable for applications which require superior POWER density and outstandINg efficiency.

Features
• Worldwide best RDS(on)*area amongst the silicon based devices
• Higher VDSS ratINg, high dv/dt capability
• Excellent switchINg performance
• Easy to drive, 100% avalanche tested

Applications
• SwitchINg applications

View
Part Name(s) : STL57N65M5 57N65M5_13 ST-Microelectronics
STMicroelectronics
Description : N-CHANNEL 650 V, 0.061 Ω TYP., 22.5 A MDMESH™ V POWER MOSFET IN a POWERFLAT™ 8x8 HV package

Description
This device is an N-CHANNEL MDMESH™ V POWER MOSFET based on an INnovative proprietary vertical process technology, which is combINed with STMicroelectronics’ well-known POWERMESH™ horizontal layout structure. The resultINg product has extremely low on resistance, which is unmatched among silicon based POWER MOSFETs, makINg it especially suitable for applications which require superior POWER density and outstandINg efficiency.

Features
■ 100% avalanche tested
■ Low INput capacitance and gate charge
■ Low gate INput resistance

Applications
■ SwitchINg applications

View

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