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Part Name(s) : AN1001 Vishay
Vishay Semiconductors
Description : The Next Step in Surface-Mount Power MOSFETS

Wharton McDaniel and David Oldham

When Vishay Siliconix introduced its LITTLE FOOT MOSFETS, it was the first time that power MOSFETS had been offered in a true surface-mount package, the SOIC. LITTLE FOOT immediately found a home in new small form factor disk drives, computers, and cellular phones.

The new LITTLE FOOT TSSOP-8 power MOSFETS are the natural evolutionary response to the continuing demands of many markets for smaller and smaller packages. LITTLE FOOT TSSOP-8 MOSFETS have a smaller footprint and a lower profile than LITTLE FOOT SOICs, while maintaining low rDS(on) and high thermal performance. Vishay Siliconix has accomplished this by putting one or two high-density MOSFET die in a standard 8-pin TSSOP package mounted on a custom leadframe.

 

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Part Name(s) : IXFM10N65 IXYS
IXYS CORPORATION
Description : HIPerFET Power MOSFETS

HIPerFET Power MOSFETS

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Part Name(s) : IRF140 IRF141 IRF143 IRF142 Samsung
Samsung
Description : N-CHANNEL POWER MOSFETS

N-CHANNEL POWER MOSFETS

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Part Name(s) : BF1105R_ BF1105WR_ BF1105_ BF1107_ BF1108R_ BF1108WR BF1108WR_ BF1108W_ BF1108_ BF1109R_ BF1109WR_ BF1109_ BF1118R_ BF1118WR_ BF1118W_ BF1118_ BF904AR_ BF904AWR_ BF904A_ BF908R_ BF908WR_ BF908_ BF909AR_ BF909AWR_ BF909A_ NXP
NXP Semiconductors.
Description : MOSFETS

NEW: RF MOSFET selection guide on www.nxp.com/rffets Easy-to-use parametric filters help you to choose the right RF MOSFET for your design.

Why choose NXP Semiconductors’ MOSFETS
► Reference designs for TV tuning
► Short leadtimes
► Broad portfolio
► Smallest packages
► 2-in-1 FETs for tuner applications
► Reliable volume supply
► Best performance MOSFETS for TV tuning

N-channel, single MOSFETS for switching

N-channel, dual-gate MOSFETS

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Part Name(s) : 2N6757 2N6758 Fairchild
Fairchild Semiconductor
Description : N-Channel Power MOSFETS, 9A, 150V/200V

N-Channel Power MOSFETS, 9A, 150V/200V

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Part Name(s) : 2N7002DWT 2N7002DW PanJit
PANJIT INTERNATIONAL
Description : DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS

This space-efficient device contains two electrically-isolated N-Channel enhancement-mode MOSFETS. It comes in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium.

FEATURES
● Low On-Resistance
● Available in lead-free plating (100% matte tin finish)
● Low Gate Threshold Voltage
● Fast Switching
● Dual N-Channel MOSFETS in Ultra-Small SOT-363 Package

APPLICATIONS
● Switching Power Supplies
● Hand-Held Computers, PDAs
● MARKING CODE: 702

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Part Name(s) : ZDM4306N M4306N Zetex
Zetex => Diodes
Description : SM-8 DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS

SM-8 DUAL N-CHANNEL ENHANCEMENT MODE MOSFETS

PARTMARKING DETAIL – M4306N

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Part Name(s) : ECG2387 ECG2399 ECG2940 ECG2941 ECG2942 ECG2943 ECG2944 ECG2945 ECG2946 ECG2947 ECG2393 ECG2394 ECG2378 ECG2377 ETC1
Unspecified
Description : Power MOSFETS

Power MOSFETS

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Part Name(s) : IRF530 NJSEMI
New Jersey Semiconductor
Description : 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETS

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETS designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETS are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 14A, 100V
• rDS(ON)= 0.160 Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

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Part Name(s) : RFM15N05 RFM15N05L RFM15N06L RFP15N05L RFP15N06L ETC
Unspecified
Description : POWER LOGIC LEVEL MOSFETS

[GE SOLID STATE]

POWER LOGIC LEVEL MOSFETS

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