P/N + Description + Content Search

NPN Silicon Germanium RF Transistor

Preliminary data
• For high power amplifiers
• Ideal for Low phase Noise oscilators
• Maxim. available Gain Gma = 21 dB at 1.8 GHz
   Noise figure F = 0.9 dB at 1.8 GHz
• Gold metallization for high reliability
• 70 GHz fT- Silicon Germanium technology.

NPN Silicon Germanium RF Transistor*

• High gain ultra Low Noise RF Transistor
• Provides outstanding performance for a wide range
   of wireless applications up to 10 GHz
• Ideal for CDMA and WLAN applications
• Outstanding Noise figure F = 0.5 dB at 1.8 GHz
   Outstanding Noise figure F = 0.85 dB at 6 GHz
• High maximum stable gain
   Gms = 27.5 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 150 GHz fT-Silicon Germanium technology
*Short-term description

NPN Silicon Germanium RF Transistor

• High gain Low Noise RF Transistor
• Provides outstanding performance
   for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding Noise figure F = 0.65 dB at 1.8 GHz
   Outstanding Noise figure F = 1.3 dB at 6 GHz
• High maximum stable gain
   Gms = 24 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 70 GHz fT-Silicon Germanium technology

NPN Silicon Germanium RF Transistor*

• High gain Low Noise RF Transistor
• Provides outstanding performance
   for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding Noise figure F = 0.65 dB at 1.8 GHz
   Outstanding Noise figure F = 1.2 dB at 6 GHz
• High maximum stable gain
   Gms = 23 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 70 GHz fT-Silicon Germanium technology
*Short-term description

NPN Silicon Germanium RF Transistor

Preliminary data
• For high power amplifiers
• Ideal for Low phase Noise oscilators
• Maxim. available Gain Gma = 21 dB at 1.8 GHz
   Noise figure F = 0.9 dB at 1.8 GHz
• Gold metallization for high reliability
• 70 GHz fT- Silicon Germanium technology.

Product Brief
The BFP720 is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in a plastic 4-pin dual emitter SOT343 package. The device combines very high gain with Lowest Noise figure at Low operating current for use in a wide range of wireless applications. The BFP720 is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Collector design supports operation voltages from 1.0 V to 4.0 V.

Features
Main features:
• High performance general purpose wideband LNA Transistor
• 150 GHz fT-Silicon Germanium Carbon technology
• Enables Best-In-Class performance for wireless applications due to
   high dynamic range
• Transistor geometry optimized for Low-current applications
• Operation voltage: 1.0 V to 4.0 V
• Very high gain at high frequencies and Low current consumption
• 26 dB maximum stable gain at 1.9 GHz and only 13 mA
• 15 dB maximum available gain at 10 GHz and only 13 mA
• Ultra Low Noise figure from latest SiGe:C technology
• 0.7 dB minimum Noise figure at 5.5 GHz and 0.95 dB at 10 GHz
• High linearity OP1dB = +8.5 dBm and OIP3 = +23 dBm at 5.5 GHz and Low current consumption of 13 mA
• Pb-free (RoHS compliant) package

Application
   FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Bluetooth, WiFi, Cordless phone, UMTS, WLAN, UWB, LNB

NPN Silicon Germanium RF Transistor

Target data sheet
• High gain ultra Low Noise RF Transistor
   for Low current operation
• Provides outstanding performance for
   a wide range of wireless applications
   up to 10 GHz and more
• Optimum gain and Noise figure
   at Low current operation
• Ideal for WLAN applications
• Outstanding Noise figure F = 0.5 dB at 1.8 GHz
   Outstanding Noise figure F = 0.8 dB at 6 GHz
• High maximum stable and available gain
   Gms = 24 dB at 1.8 GHz, Gma = 16.5 dB at 6 GHz
• 150 GHz fT-Silicon Germanium technology
• Extremly small and flat leadless package
   height 0.32 mm max.
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101

Product Brief
The BFP720F is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in a plastic 4-pin dual emitter TSFP-4 package. The device combines very high gain with Lowest Noise figure at Low operating current for use in a wide range of wireless applications. The BFP720F is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Collector design supports operation voltages from 1.0 V to 4.0 V.

Features
Main features:
• High performance general purpose wideband LNA Transistor
• 150 GHz fT-Silicon Germanium Carbon technology
• Enables Best-In-Class performance for wireless applications due to
   high dynamic range
• Transistor geometry optimized for Low-current applications
• Operation voltage: 1.0 V to 4.0 V
• Very high gain at high frequencies and Low current consumption
• 26.5 dB maximum stable gain at 1.9 GHz and only 13 mA
• 15 dB maximum available gain at 10 GHz and only 13 mA
• Ultra Low Noise figure from latest SiGe:C technology
• 0.7 dB minimum Noise figure at 5.5 GHz and 1.0 dB at 10 GHz
• High linearity OP1dB = +7 dBm and OIP3 = +21 dBm at 5.5 GHz and Low current consumption of 13 mA
• Pb-free (RoHS compliant) package

Applications
   FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Satellite Radio, Bluetooth, WiFi, Cordless phone, UMTS, WLAN, UWB, LNB.

NPN Silicon Germanium RF Transistor

• High gain ultra Low Noise RF Transistor
• Extremly small and flat leadless package,
   height 0.32 mm, ideal for modules
• Provides outstanding performance for
   wireless applications up to 10 GHz
• Ideal for WLAN applications,
   including routers and access points
• Based on Infineons reliable high volume
   SiGe:C technology
• Outstanding Noise figure NFmin 0.5 dB at 1.8 GHz
   Outstanding Noise figure NFmin 0.8 dB at 6 GHz
• Accurate SPICE GP model enables effective
   design in process
• High maximum stable and available gain
   Gms = 24.5 dB at 1.8 GHz, Gma = 15 dB at 6 GHz
• Pb-free (RoHS compliant) package

Product Brief
The BFP760 is a linear and very Low Noise wideband NPN Bipolar RF Transistor. The device is based on Infineon’s reliable high volume Silicon Germanium carbon (SiGe:C) heterojunction Bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 70 mA. With its high linearity at currents as Low as 10 mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately 45 GHz, hence the device offers high power gain at frequencies up to 9 GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.

Features
• Very Low Noise amplifier based on Infineon´s reliable,
   high volume SiGe:C technology
• High linearity OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA
• High transition frequency fT = 45 GHz @ 1 GHz, 3 V, 35mA
• NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA
• Maximum power gain Gms = 21.5 dB @ 3.5 GHz, 3 V, 30 mA
• Low power consumption, ideal for mobile applications
• Easy to use Pb-free (RoHS compliant) and halogen-free
   standard package with visible leads
• Qualification report according to AEC-Q101 available

Applications
As Low Noise Amplifier (LNA) in
• Mobile and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5 GHz, Bluetooth
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, buffer amplifier in VCOs