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Part Name(s) : BFP650E6327
Infineon Technologies
Infineon Technologies
Description : NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor

Preliminary data
• For high power amplifiers
• Ideal for Low phase Noise oscilators
• Maxim. available Gain Gma = 21 dB at 1.8 GHz
   Noise figure F = 0.9 dB at 1.8 GHz
• Gold metallization for high reliability
• 70 GHz fT- Silicon Germanium technology.

Part Name(s) : BFP740 BFP740 BFP740
Infineon Technologies
Infineon Technologies
Description : Low Noise Silicon Germanium Bipolar RF Transistor

NPN Silicon Germanium RF Transistor*

• High gain ultra Low Noise RF Transistor
• Provides outstanding performance for a wide range
   of wireless applications up to 10 GHz
• Ideal for CDMA and WLAN applications
• Outstanding Noise figure F = 0.5 dB at 1.8 GHz
   Outstanding Noise figure F = 0.85 dB at 6 GHz
• High maximum stable gain
   Gms = 27.5 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 150 GHz fT-Silicon Germanium technology
*Short-term description

Infineon Technologies
Infineon Technologies
Description : NPN Silicon Germanium RF Transistor

NPN Silicon Germanium RF Transistor

• High gain Low Noise RF Transistor
• Provides outstanding performance
   for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding Noise figure F = 0.65 dB at 1.8 GHz
   Outstanding Noise figure F = 1.3 dB at 6 GHz
• High maximum stable gain
   Gms = 24 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 70 GHz fT-Silicon Germanium technology

Infineon Technologies
Infineon Technologies
Description : Low Noise Silicon Germanium Bipolar RF Transistor

NPN Silicon Germanium RF Transistor*

• High gain Low Noise RF Transistor
• Provides outstanding performance
   for a wide range of wireless applications
• Ideal for CDMA and WLAN applications
• Outstanding Noise figure F = 0.65 dB at 1.8 GHz
   Outstanding Noise figure F = 1.2 dB at 6 GHz
• High maximum stable gain
   Gms = 23 dB at 1.8 GHz
• Gold metallization for extra high reliability
• 70 GHz fT-Silicon Germanium technology
*Short-term description

Infineon Technologies
Infineon Technologies
Description : High Linearity Silicon Germanium Bipolar RF Transistor

NPN Silicon Germanium RF Transistor

Preliminary data
• For high power amplifiers
• Ideal for Low phase Noise oscilators
• Maxim. available Gain Gma = 21 dB at 1.8 GHz
   Noise figure F = 0.9 dB at 1.8 GHz
• Gold metallization for high reliability
• 70 GHz fT- Silicon Germanium technology.

Part Name(s) : BFP720 BFP720
Infineon Technologies
Infineon Technologies
Description : Low Noise Silicon Germanium Bipolar RF Transistor

Product Brief
The BFP720 is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in a plastic 4-pin dual emitter SOT343 package. The device combines very high gain with Lowest Noise figure at Low operating current for use in a wide range of wireless applications. The BFP720 is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Collector design supports operation voltages from 1.0 V to 4.0 V.

Features
Main features:
• High performance general purpose wideband LNA Transistor
• 150 GHz fT-Silicon Germanium Carbon technology
• Enables Best-In-Class performance for wireless applications due to
   high dynamic range
Transistor geometry optimized for Low-current applications
• Operation voltage: 1.0 V to 4.0 V
• Very high gain at high frequencies and Low current consumption
• 26 dB maximum stable gain at 1.9 GHz and only 13 mA
• 15 dB maximum available gain at 10 GHz and only 13 mA
• Ultra Low Noise figure from latest SiGe:C technology
• 0.7 dB minimum Noise figure at 5.5 GHz and 0.95 dB at 10 GHz
• High linearity OP1dB = +8.5 dBm and OIP3 = +23 dBm at 5.5 GHz and Low current consumption of 13 mA
• Pb-free (RoHS compliant) package

Application
   FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Bluetooth, WiFi, Cordless phone, UMTS, WLAN, UWB, LNB

Part Name(s) : BFR720L3RH BFR720L3RH
Infineon Technologies
Infineon Technologies
Description : Low Noise Silicon Germanium Bipolar RF Transistor

NPN Silicon Germanium RF Transistor

Target data sheet
• High gain ultra Low Noise RF Transistor
   for Low current operation
• Provides outstanding performance for
   a wide range of wireless applications
   up to 10 GHz and more
• Optimum gain and Noise figure
   at Low current operation
• Ideal for WLAN applications
• Outstanding Noise figure F = 0.5 dB at 1.8 GHz
   Outstanding Noise figure F = 0.8 dB at 6 GHz
• High maximum stable and available gain
   Gms = 24 dB at 1.8 GHz, Gma = 16.5 dB at 6 GHz
• 150 GHz fT-Silicon Germanium technology
• Extremly small and flat leadless package
   height 0.32 mm max.
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101

Part Name(s) : BFP720F BFP720F
Infineon Technologies
Infineon Technologies
Description : Low Noise Silicon Germanium Bipolar RF Transistor

Product Brief
The BFP720F is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in a plastic 4-pin dual emitter TSFP-4 package. The device combines very high gain with Lowest Noise figure at Low operating current for use in a wide range of wireless applications. The BFP720F is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Collector design supports operation voltages from 1.0 V to 4.0 V.

Features
Main features:
• High performance general purpose wideband LNA Transistor
• 150 GHz fT-Silicon Germanium Carbon technology
• Enables Best-In-Class performance for wireless applications due to
   high dynamic range
Transistor geometry optimized for Low-current applications
• Operation voltage: 1.0 V to 4.0 V
• Very high gain at high frequencies and Low current consumption
• 26.5 dB maximum stable gain at 1.9 GHz and only 13 mA
• 15 dB maximum available gain at 10 GHz and only 13 mA
• Ultra Low Noise figure from latest SiGe:C technology
• 0.7 dB minimum Noise figure at 5.5 GHz and 1.0 dB at 10 GHz
• High linearity OP1dB = +7 dBm and OIP3 = +21 dBm at 5.5 GHz and Low current consumption of 13 mA
• Pb-free (RoHS compliant) package

Applications
   FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Satellite Radio, Bluetooth, WiFi, Cordless phone, UMTS, WLAN, UWB, LNB.

Part Name(s) : BFR740L3RH BFR740L3RH
Infineon Technologies
Infineon Technologies
Description : Low Noise Silicon Germanium Bipolar RF Transistor

NPN Silicon Germanium RF Transistor

• High gain ultra Low Noise RF Transistor
• Extremly small and flat leadless package,
   height 0.32 mm, ideal for modules
• Provides outstanding performance for
   wireless applications up to 10 GHz
• Ideal for WLAN applications,
   including routers and access points
• Based on Infineons reliable high volume
   SiGe:C technology
• Outstanding Noise figure NFmin 0.5 dB at 1.8 GHz
   Outstanding Noise figure NFmin 0.8 dB at 6 GHz
• Accurate SPICE GP model enables effective
   design in process
• High maximum stable and available gain
   Gms = 24.5 dB at 1.8 GHz, Gma = 15 dB at 6 GHz
• Pb-free (RoHS compliant) package

Part Name(s) : BFP760
Infineon Technologies
Infineon Technologies
Description : Low Noise Silicon Germanium Bipolar RF Transistor

Product Brief
The BFP760 is a linear and very Low Noise wideband NPN Bipolar RF Transistor. The device is based on Infineon’s reliable high volume Silicon Germanium carbon (SiGe:C) heterojunction Bipolar technology. The collector design supports voltages up to VCEO = 4.0 V and currents up to IC = 70 mA. With its high linearity at currents as Low as 10 mA (see Fig. 5-8) the device supports energy efficient designs. The typical transition frequency is approximately 45 GHz, hence the device offers high power gain at frequencies up to 9 GHz in amplifier applications. The device is housed in an easy to use plastic package with visible leads.

Features
• Very Low Noise amplifier based on Infineon´s reliable,
   high volume SiGe:C technology
• High linearity OIP3 = 27 dBm @ 5.5 GHz, 3 V, 30 mA
• High transition frequency fT = 45 GHz @ 1 GHz, 3 V, 35mA
• NFmin = 0.95 dB @ 5.5 GHz, 3 V, 10 mA
• Maximum power gain Gms = 21.5 dB @ 3.5 GHz, 3 V, 30 mA
Low power consumption, ideal for mobile applications
• Easy to use Pb-free (RoHS compliant) and halogen-free
   standard package with visible leads
• Qualification report according to AEC-Q101 available

Applications
As Low Noise Amplifier (LNA) in
• Mobile and fixed connectivity applications: WLAN 802.11a/b/g/n/ac, WiMAX 2.5/3.5 GHz, Bluetooth
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB) and C-band LNB
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, buffer amplifier in VCOs

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