datasheetbank_Logo
Integrated circuits, Transistor, Semiconductors Search and Datasheet PDF Download Site

P/N + Description + Content Search

Search Word's :
Part Name(s) : MG600Q2YS60A
Toshiba
Toshiba
Description : TOSHIBA IGBT MODULE SILICON N CHANNEL IGBT

TOSHIBA IGBT MODULE SILICON N CHANNEL IGBT

HIGH POWER SWITHCING APPLICATIONS
MOTOR CONTROL APPLICATIONS

● The Electrodes are Isolated from Case.
● Enhancement−Mode
● Thermal Output Terminal (TH)

Part Name(s) : NGTG20N60L2TF1G
ON-Semiconductor
ON Semiconductor
Description : N-Channel IGBT

N-Channel IGBT
600V, 20A, VCE(sat);1.45V Single TO-3PF-3L

Features
IGBT VCE(sat)=1.45V typ. (IC=20A, VGE=15V)
• Adaption of full isolation type package
IGBT tf=67ns typ.
• Maxium junction temperature Tj=175°C
• Enhansment type

Applications
• Power factor correction of white goods appliance
• General purpose inverter

Part Name(s) : MGP15N38CL
Motorola
Motorola => Freescale
Description : Internally Clamped N-Channel IGBT

Internally Clamped N-Channel IGBT

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate Collector Over–Voltage Protection from monolithic circuitry for usage as an Ignition Coil Driver.

• Temperature Compensated Gate – Collector Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability

Part Name(s) : MGP20N14CL
ON-Semiconductor
ON Semiconductor
Description : SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver.

• Temperature Compensated Gate–Collector Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability

Part Name(s) : MGP20N14CL
Motorola
Motorola => Freescale
Description : SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver.

• Temperature Compensated Gate–Drain Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability

Part Name(s) : MGP20N40CL
Motorola
Motorola => Freescale
Description : SMARTDISCRETES Internally Clamped, N-Channel IGBT

SMARTDISCRETES Internally Clamped, N-Channel IGBT

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver.

• Temperature Compensated Gate–Collector Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessors
• Low Saturation Voltage
• High Pulsed Current Capability

Part Name(s) : MG25Q2YS40
Toshiba
Toshiba
Description : GTR MODULE SILICON N CHANNEL IGBT

GTR MODULE SILICON N CHANNEL IGBT
HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS

Intersil
Intersil
Description : 63A, 1200V, NPT Series N-Channel IGBT

63A, 1200V, NPT Series N-Channel IGBT

The HGTG20N120CN is aNon-PunchThrough (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar Transistors. This device has the high input impedance of a MOSFET and the low on
state conduction loss of a bipolar Transistor.
The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Features
• 63A, 1200V, TC= 25oC
• 1200V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ= 150oC
• Short Circuit Rating
• Low Conduction Loss
• Avalanche Rated

Intersil
Intersil
Description : 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

The HGTG20N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar Transistors. This device has the high input impedance of a MOSFET and the low on state conduction loss of a bipolar Transistor.

Features
 63A, 1200V, TC = 25oC
 1200V Switching SOA Capability
 Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC
 Short Circuit Rating
 Low Conduction Loss

 

 

Part Name(s) : MG300J2YS40
Toshiba
Toshiba
Description : SILICON N CHANNEL IGBT

SILICON N CHANNEL IGBT

HIGH POWER SWITCHING APPLICATIONS.
MOTOR CONTROL APPLICATIONS.

12345678910 Next

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]