● International standard package
● Direct copper bonded Al2O3 -ceramic base plate
● Planar passivated chips
● Isolation voltage 3600 V~
● UL registered, E 72873
● Keyed gate/cathode twin pins
● Motor control
● Power converter
● Heat and temperature control for industrial furnaces and chemical processes
● Lighting control
● Contactless switches
The DCP02 series is a family of 2W, isolated, unregulated DC/DC converters. Requiring a minimum of external components and including on-chip device protection, the DCP02 series provides extra features such as output disable and synchronization of switching frequencies. The use of a highly integrated package design results in highly reliable products with power densities of 79W/in3 (4.8W/cm3) for DIP-14, and 106W/in3 (6.5W/cm3) for SO-28. This combination of features and small size makes the DCP02 suitable for a wide range of applications.
• Up To 89% Efficiency
• Thermal Protection
• Device-to-Device Synchronization
• SO-28 Power Density of 106W/in3 (6.5W/cm3 )
• EN55022 Class B EMC Performance
• UL1950 Recognized Component
• JEDEC 14-Pin and SO-28 Packages
• Point-of-Use Power Conversion
• Ground Loop Elimination
• Data Acquisition
• Industrial Control and Instrumentation
• Test Equipment
. Plastic MINI MELF package.
. Glass passivated chip junction.
. 150W peak pulse power capability with a 10/1000µs waveform ,repetition rate(duty cycle): 0.01%.
. Excellent clamping capability.
. Very fast response time.
. Low incremental surge resistance.
. Typical ID less than 1mA above 10V rating
. High temperature soldering guaranteed: 250℃/10 seconds of terminal
The UTC 2N7002K uses advanced technology to provide excellent RDS(ON), low gate charge and low gate voltages during
operation. This device is suitable for use as a load switch or in PWM applications.
* Low Reverse Transfer Capacitance (CRSS = typical 3.0 pF)
* ESD Protected
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
The AON7400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable for use as a high side switch in SMPS and general purpose applications.
ID (at VGS=10V) 40A
RDS(ON) (at VGS=10V) < 7.5mΩ
RDS(ON) (at VGS = 4.5V) < 10.5mΩ
100% UIS Tested
100% Rg Tested
3.2 (L) x 2.8 (W) x 3.4 (H) mm Size
2.8 mm Diameter Lens−Top Type
InGaAlP Technology (Ultra High Brightness)
Low Drive Current
High Intensity Light Emission
Clear Luminescence is obtained
High Operating Temperture
Standard Embossed Taping 8 mm Pitch : T10 (500 pcs/reel)
Reflow Soldering is possible
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
■ TYPICAL RDS(on) = 16 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ VERY LOW INTRINSIC CAPACITANCES
■ GATE CHARGE MINIMIZED
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ AC ADAPTORS AND BATTERY CHARGERS
FOR HANDHELD EQUIPMENT
N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power industrial and military transmitting equipment in the h.f. and v.h.f. band. The transistor presents excellent performance as a linear amplifier in s.s.b. applications. It is resistance
stabilized and is guaranteed to withstand severe load mismatch conditions. Transistors are supplied in matched hFE groups.
The transistor has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange.
VCES = 1200V
VCE(on) typ. = 2.4V
@VGE = 15V, IC = 50A
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode
• Very low conduction and switching losses
• HEXFRED™ antiparallel diodes with ultra- soft recovery
• Industry standard package
• UL approved
• Generation 4 IGBT technology
For surface mounted application
Metal silicon junction, majority carrier conduction
Low forward voltage drop
Easy pick and place
High surge current capability
Plastic material used carries Underwriters Laboratory Classification 94V-0
High temperature soldering: 260°C / 10 seconds at terminals