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Description : 1.6x0.8mm SUPER THIN SMD CHIP LED LAMPS

Description
The Bright Red source color devices are made with Gallium Phosphide Red Light Emitting Diode.
The Super Bright Green source color devices are made with Gallium Phosphide Green Light Emitting Diode.
The High Efficiency Red source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Orange Light Emitting Diode.
The Yellow source color devices are made with Gallium Arsenide Phosphide on Gallium Phosphide Yellow Light Emitting Diode.
The Super Bright Red source color devices are made with Gallium Aluminum Arsenide Red Light Emitting Diodes.
The Super Bright Yellow source color devices are made with DH InGaAlP on GaAs substrate Light Emitting Diode.

Features
● 1.6mmx0.8mm SMT LED. 0.75mm THICKNESS.
● LOW POWER CONSUMPTION.
● WIDE VIEWING ANGLE.
● IDEAL FOR BACKLIGHT AND INDICATOR.
● VARIOUS COLORS AND LENS TYPES AVAILABLE.

Part Name(s) : KCL1608
Kodenshi
Kodenshi Auk Co., LTD
Description : 1608 Infrared Emitting Diode

Description
The KCL1608 is an Infrared Emitting Diode in miniature SMD package which is molded in a water clear plastic with flat top view lens.

Features
● Low forward voltage
● Package in 8mm tape on 7 inch diameter reel
● Small Double - End package

Applications
● PCB mounted Infrared sensor
● Floppy Disk Drive
● Optical switches

Vishay
Vishay Semiconductors
Description : GaAs Infrared Emitting Diode in SMT Package

Description
TSMS3700 is a standard GaAs Infrared Emitting Diode in a miniature PL–CC–2 package.
Its flat window provides a wide aperture, making it ideal for use with external optics.
The Diode is case compatible to the TEMT3700 phototransistor, allowing the user to assemble his own optical interrupters.

Features
● SMT IRED with high radiant power
● Low forward voltage
● Compatible with automatic placement equipment
● EIA and ICE standard package
● Suitable for Infrared, vapor phase and wavesolder process
● Available in 8 mm tape
● Suitable for DC and high pulse current operation
● Wide angle of half intensity ϕ = ± 60°
● Peak wavelength λp = 950 nm
● High reliability
● Matching to TEMT3700 phototransistor

Applications
    Infrared source in tactile keyboards
    IR Diode in low space applications
    Matching with phototransistor TEMT3700 in reflective sensors
    PCB mounted Infrared sensors
    Infrared emitter for miniature light barriers

Part Name(s) : TSMS3700
Vitesse
Vitesse Semiconductor
Description : GaAs Infrared Emitting Diode in SMT Package

Description
TSMS3700 is a standard GaAs Infrared Emitting Diode in a miniature PL–CC–2 package.
Its flat window provides a wide aperture, making it ideal for use with external optics.
The Diode is case compatible to the TEMT3700 phototransistor, allowing the user to assemble his own optical interrupters.
   
Features
● SMT IRED with high radiant power
● Low forward voltage
● Compatible with automatic placement equipment
● EIA and ICE standard package
● Suitable for Infrared, vapor phase and wavesolder process
● Available in 8 mm tape
● Suitable for DC and high pulse current operation
● Wide angle of half intensity ϕ = ± 60°
● Peak wavelength λp = 950 nm
● High reliability
● Matching to TEMT3700 phototransistor
   
Applications
    Infrared source in tactile keyboards
    IR Diode in low space applications
    Matching with phototransistor TEMT3700 in reflective sensors
    PCB mounted Infrared sensors
    Infrared emitter for miniature light barriers
   

Part Name(s) : TSML3700
Vishay
Vishay Semiconductors
Description : GaAs/GaAlAs Infrared Emitting Diode in SMT Package

Description
TSML3700 is an Infrared Emitting Diode in GaAlAs on GaAs technology in a miniature PL–CC–2 SMD package.
It has been designed to meet the increasing demand on optoelectronic devices for surface mounting.
The package consists of a lead frame which is surrounded with a white thermoplast. The reflector inside the package is filled up with clear epoxy.
This new package achieves an improvement of 100% in radiant intensity, compared with the old SOT–23 package.

Features
● SMT IRED with extra high radiant power
● Low forward voltage
● Compatible with automatic placement equipment
● EIA and ICE standard package
● Suitable for Infrared, vapor phase and wave-solder process
● Available in 8 mm tape
● Suitable for pulse current operation
● Extra wide angle of half intensity ϕ = ± 60
● Peak wavelength p = 925 nm
● High reliability
● Matching to TEMT3700 phototransistor

Applications
    Infrared source in tactile keyboards
    IR Diode in low space applications
    Matching with phototransistor TEMT3700 in reflective sensors
    High performance PCB mounted Infrared sensors
    High power Infrared emitter for miniature light barriers

Part Name(s) : TSMF3700
Vishay
Vishay Semiconductors
Description : High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

Description
TSMF3700 is a high speed Infrared Emitting Diode in GaAlAs on GaAlAs double hetero (DH) technology in a miniature PL-CC-2 SMD package.
It has been designed to meet the increasing demand on optoelectronic devices for surface mounting.
The package consists of a lead frame which is surrounded with a white thermoplast. The reflector inside the package is filled up with clear epoxy.

Features
• SMT IRED with extra high radiant power
• Low forward voltage
• Compatible with automatic placement equipment
• EIA and ICE standard package
• Suitable for Infrared, vapor phase and wavesolder process
• Available in 8 mm tape
• Suitable for pulse current operation
• Extra wide angle of half intensity ϕ = ± 60°
• Peak wavelength λp = 870 nm
• High reliability
• Lead-free component
• Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

Applications
    Infrared source in tactile keyboards
    IR Diode in low space applications
    High performance PCB mounted Infrared sensors
    High power Infrared emitter for miniature light barriers

Description : Tubular Vitreous Enamelled Wirewound Resistors

General Information
Vitreous enamelled wirewound resistors are capable of withstanding a higher dissipation size for size, than any other protected type; this is attributable to the higher operating temperature which the wire and enamel can withstand. Vitreous enamel provides exceptionally good protection to the wire element and is essentially impervious to moisture. The resistors can safely be used in harsh environmental conditions.
   
1600/1900 Series
   
• Impervious lead free vitreous enamel coatng
• Can be supplied with fxed, adjustable, tapped or
    low inductance winding
• Seven terminaton styles with choice of mountng arrangements
• Manufactured RoHS compliant Pb-free terminatons

Part Name(s) : SEP8506-003
HONEYWELL-ACC
Honeywell Accelerometers
Description : SEP Series GaAs Infrared Emitting Diode, Side-Emitting Plastic Package

Description
The SEP8506 is a gallium arsenide Infrared Emitting Diode molded in a side-Emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package.

Features
● Side-Emitting plastic package
● 50 ° (nominal) beam angle
● 935 nm wavelength
● Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

Part Name(s) : SEP8506-001
HONEYWELL-ACC
Honeywell Accelerometers
Description : SEP Series GaAs Infrared Emitting Diode, Side-Emitting Plastic Package

Description
The SEP8506 is a gallium arsenide Infrared Emitting Diode molded in a side-Emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package.

Features
● Side-Emitting plastic package
● 50 ° (nominal) beam angle
● 935 nm wavelength
● Mechanically and spectrally matched to SDP8406 phototransistor, SDP8106 photodarlington and SDP8000/8600 series Schmitt trigger

Vishay
Vishay Semiconductors
Description : High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs

GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1¾) Package

Description
TSAL7600 is a high efficiency Infrared Emitting Diode in GaAlAs on GaAs technology, molded in clear plastic packages.
In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength.
The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters.

Features
● Extra high radiant power and radiant intensity
● High reliability
● Low forward voltage
● Suitable for high pulse current operation
● Standard T–1¾ (ø 5 mm) package
● Angle of half intensity ϕ = ± 30°
● Peak wavelength λp = 940 nm
● Good spectral matching to Si photodetectors

Applications
    Infrared remote control units with high power requirements
    Free air transmission systems
    Infrared source for optical counters and card readers
    IR source for smoke detectors

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