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Part Name(s) : FDC10 FDC10-12D05 FDC10-12D12 FDC10-12D15 FDC10-12S05 FDC10-12S12 FDC10-12S15 FDC10-12S33 FDC10-24D05 FDC10-24D12 FDC10-24D15 FDC10-24S05 FDC10-24S12 FDC10-24S15 FDC10-24S33 FDC10-48D05 FDC10-48D12 FDC10-48D15 FDC10-48S05 FDC10-48S12 FDC10-48S15 FDC10-48S33 FDC10-24S05W FDC10-24S12W FDC10-24S15W P-DUKE
Power Mate Technology
Description : 10 WATTS OF OUTPUT POWER FROM a 2 x 1 x 0.4 INCH PACKAGE View

The FDC10 and FDC10-W series OFfer 10 WATTS OF OUTPUT POWER FROM a 2 x 1 x 0.4 INCH PACKAGE. FDC10 series have 2 : 1 wide input voltage OF 9-18, 18-36 and 36-75VDC.
FDC10-W series have 4:1 ultra wide input voltage OF 9-36 and 18-75VDC. The FDC10 and FDC10-W features 1600VDC OF isolation, short-circuit and over-voltage protection, as well as six sided shielding. The safety approval OF EN60950 and UL1950. All models are particularly suited to telecommunications, industrial, mobile telecom and test equipment applications. According the extended operation temperature range, there are “M1” and “M2” version for special application.

10 WATTS OUTPUT POWER
• 2:1 AND 4:1 WIDE INPUT VOLTAGE RANGE
• INTERNATIONAL SAFETY STANDARD APPROVAL
• SIX-SIDED CONTINUOUS SHIELD
• HIGH EFFICIENCY UP TO 86%
• STANDARD 2” X 1” X 0.4” PACKAGE
• FIXED SWITCHING FREQUENCY

Part Name(s) : FDC10 FDC10-12D05 FDC10-12D12 FDC10-12D15 FDC10-12S05 FDC10-12S12 FDC10-12S15 FDC10-12S33 FDC10-24S33 FDC10-48S33 FDC10-24S05 FDC10-24S05W FDC10-24S12 FDC10-24S12W FDC10-24S15 FDC10-24S15W FDC10-24D05 FDC10-24D05W FDC10-24D12 FDC10-24D12W FDC10-24D15 FDC10-24D15W FDC10-48S05 FDC10-48S05W FDC10-48S12 ETC
Unspecified
Description : 10 WATTS OF OUTPUT POWER FROM a 2 x 1 x 0.4 INCH PACKAGE View

[P-DUKE]

The FDC10 and FDC10-W series OFfer 10 WATTS OF OUTPUT POWER FROM a 2 x 1 x 0.4 INCH PACKAGE. FDC10 series have 21 wide input voltage OF 9-18, 18-36 and 36-75VDC. FDC10-W series have 4:1 ultra wide input voltage OF 9-36 and 18-75VDC. The FDC10 and FDC10-W features 1600VDC OF isolation, short-circuit and over-voltage protection, as well as six sided shielding. The safety approval OF EN60950 and UL1950. All models are particularly suited to telecommunications, industrial, mobile telecom and test equipment applications. According the extended operation temperature range, there are “M1” and “M2” version for special application.

10 WATTS OUTPUT POWER
• 2:1 AND 4:1 WIDE INPUT VOLTAGE RANGE
• INTERNATIONAL SAFETY STANDARD APPROVAL
• SIX-SIDED CONTINUOUS SHIELD
• HIGH EFFICIENCY UP TO 86%
• STANDARD 2” X 1” X 0.4” PACKAGE
• FIXED SWITCHING FREQUENCY

Part Name(s) : PTB20079 Ericsson
Ericsson
Description : 10 WATTS, 1.6?1.7 GHz INMARSAT RF POWER Transistor View

Description
The 20079 is a class A/AB, NPN, silicon bipolar junction, internally matched, common emitter RF POWER transistor intended for 26 Vdc operation across 1.6 to 1.7 GHz frequency band. It is rated at 10 WATTS minimum OUTPUT POWER for PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.

10 WATTS, 1.6–1.7 GHz
• Class A/AB Characteristics
• 38% Collector Efficiency at 10 WATTS
• Gold Metallization
• Silicon Nitride Passivated

Part Name(s) : PTB20008 Ericsson
Ericsson
Description : 10 WATTS, 935?960 MHz Cellular Radio RF POWER Transistor View

Description
The 20008 is a class AB, NPN, common emitter RF POWER transistor intended for 24 Vdc operation FROM 935 to 960 MHz. Rated at 10 WATTS minimum OUTPUT POWER, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard.

10 WATTS, 935–960 MHz
• Class AB Characteristics
• 50% Collector Efficiency at 10 WATTS
• Gold Metallization
• Silicon Nitride Passivated


Part Name(s) : HSD100IFW1-A00 ETC
Unspecified
Description : TFT LCD has a 10 (17:10) INCH / WSVGA (1024 horizontal by 600 vertical pixel) resolution View

HannStar Display model HSD100IFW1-A is a color active matrix thin film transistor (TFT) liquid crystal display (LCD) that uses amorphous silicon TFT as a switching device. This model is composed OF a TFT LCD panel, a driving circuit and a backlight system. This TFT LCD has a 10 (17:10) INCH diagonally measured active display area with WSVGA (1024 horizontal by 600 vertical pixel) resolution. 

*  Features
■  10 (17:10 diagonal) INCH configuration
■  One channel LVDS interface
■  256K color by 6 bit R.G.B signal input
■  RoHS Compliance

Part Name(s) : DSN17 DSN17N12S5 DSN17N12S3.3 Power-One
Power-One Inc.
Description : DSN17 SERIES SINGLE OUTPUT View

DESCRIPTION
With POWER densities up to 25 WATTS per cubic INCH (1.53 WATTS per cm3), the DSN17 Series delivers 3.5 amperes OF current at either 5 or 3.3 volts. Designed for digital and microprocessor applications, the non-isolated flat PACKAGE requires only 1 square INCH (6.45 cm2) OF PCB area. Remote ON/OFF gives additional system flexibility. The 100KHz operating frequency OF the DSN17 Series allows an increased POWER density while including adequate heat sinking and input/OUTPUT filtering. This eliminates the need for external components in some applications.

FEATURES
• Up to 17 WATTS OUTPUT POWER
• Single In Line PACKAGE
POWER Density up to 25 WATTS per Cubic INCH
• Efficiencies to 88% (Lower for 3.3V OUTPUT)
• High Efficiency Step Down Regulator
• Remote ON/OFF

Part Name(s) : PIC16C83 PIC16C83-04 PIC16C83-10 PIC16C84 PIC16C84-04 PIC16C84-10 PIC16C84A PIC16C84A-04 PIC16C84A-10 PIC16C8X PIC16C8X-04 PIC16C8X-10 PIC16CR83 PIC16CR83-04 PIC16CR83-10 PIC16CR84 PIC16CR84-04 PIC16CR84-10 PIC16CR8X-04 PIC16CR8X-10 PIC16LC83-04 PIC16LC83-10 PIC16LC84-04 PIC16LC84-10 PIC16LC84A-04 Microchip
Microchip Technology
Description : 8-Bit CMOS EEPROM Microcontrollers View

GENERAL DESCRIPTION
The PIC16C8X is a group in the PIC16CXX family OF low-cost, high-performance, CMOS, fully-static, 8-bit microcontrollers. This group contains the following devices:

• PIC16C83
• PIC16CR83
• PIC16C84
• PIC16C84A
• PIC16CR84

All PIC16/17 microcontrollers employ an advanced RISC architecture. PIC16CXX devices have enhanced core features, eight-level deep stack, and multiple internal and external interrupt sources. The separate instruction and data buses OF the Harvard architecture allow a 14-bit wide instruction word with a separate 8-bit wide data bus. The two stage instruction pipeline allows all instructions to execute in a single cycle, except for program branches (which require two cycles). A total OF 35 instructions (reduced instruction set) are available. Additionally, a large register set gives some OF the architectural innovations used to achieve a very high performance.

High Performance RISC CPU Features
• Only 35 single word instructions to learn
• All instructions single cycle (400 ns @ 10 MHz) except for program branches which are two-cycle
• Operating speed:
   DC - 10 MHz clock input
   DC - 400 ns instruction cycle
• 14-bit wide instructions
• 8-bit wide data path
• 15 special function hardware registers
• Eight-level deep hardware stack
• Direct, indirect and relative addressing modes
• Four interrupt sources:
   - External RB0/INT pin
   - TMR0 timer overflow
   - PORTB<7:4> interrupt on change
   - Data EEPROM write complete
• 1,000,000 data memory EEPROM ERASE/WRITE cycles - Typical
• EEPROM Data Retention > 40 years

Peripheral Features
• 13 I/O pins with individual direction control
• High current sink/source for direct LED drive
   - 25 mA sink max. per pin
   - 20 mA source max. per pin
• TMR0: 8-bit timer/counter with 8-bit programmable prescaler

Special Microcontroller Features
POWER-on Reset (POR)
POWER-up Timer (PWRT)
• Oscillator Start-up Timer (OST)
• Watchdog Timer (WDT) with its own on-chip RC oscillator for reliable operation
• Code-protection
POWER saving SLEEP mode
• Selectable oscillator options
• Serial In-System Programming - via two pins
   (ROM devices support only Data EEPROM programming)

CMOS Technology
• Low-POWER, high-speed CMOS EEPROM technology
• Fully static design
• Wide operating voltage range:
   - Commercial: 2.0V to 6.0V
   - Industrial: 2.0V to 6.0V
• Low POWER consumption:
   - < 2 mA typical @ 5V, 4 MHz
   - 15 µA typical @ 2V, 32 kHz
   - < 1 µA typical standby current @ 2V (all devices except PIC16C84)

Part Name(s) : CBD10 CBD2 CBD4 CBD6 CBRHD CBRHD-02 CBRHD-04 CBRHD-06 CBRHD-10 CBD10 CBD2 CBD4 CBD6 CBRHD-02 CBRHD-04 CBRHD-06 CBRHD-10 CBRHD CBRHD CBRHD-02 CBRHD-04 CBRHD-06 CBRHD-10 CBD10 CBD2 Central-Semiconductor
Central Semiconductor
Description : SURFACE MOUNT SILICON HIGH DENSITY 0.5 AMP BRIDGE RECTIFIER View

DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHD series types are silicon full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips.

MARKING CODES:
CBRHD-02: CBD2 CBRHD-04: CBD4
CBRHD-06: CBD6 CBRHD-10: CBD10

FEATURES:
• Efficient use OF board space: requires only 42mm2 OF board space vs. 120mm2 OF board space needed for industry standard 1.0 Amp surface mount bridge rectifier.
• 50% higher density (Amps/mm2) than the industry standard 1.0 Amp surface mount bridge rectifier.
• Glass passivated chips for high reliability.

Part Name(s) : LTA-10024 ETC
Unspecified
Description : 1 INCH Steel Liquidtight Adapter, Thread Size 1-7/16 INCH-18 UNEF-2B, Rigid Conduit to Metric View

[Thomas & Betts]

1 INCH Steel Liquidtight Adapter, Thread Size 1-7/16 INCH-18 UNEF-2B, Rigid Conduit to Metric

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